Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration

International audienceWe report on the photovoltaic characteristics of solar cells based on 15 and 30 In x Ga 1 % x N / GaN ( x = 0.10 and 0.19) multiquantum wells (MQWs) grown on sapphire. Doubling the number of MQWs increases the peak external quantum ef fi ciency by a factor of 2 for both In contents. Devices with 19% In, with a spectral cutoff at 465nm, exhibit an open-circuit voltage of 1.7Vand a short-circuit current density of 3.00mA / cm 2 under 1 sun AM1.5G illumination, leading to a conversion ef fi ciency of 2.00%, making them promising for hybrid integration with non-III - nitride photovoltaic devices. © 2014 The Japan Society of Applied Physic