Add to ORKGZnSnN_2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2_1 crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect
We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnS...
Direct bandgap, earth abundant semiconductors with Eg around 1.5 eV are essential for both photovol...
Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron spu...
ZnSnN_2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovolt...
By literature reports, ZnSnN2 has been pointed out as a potential high bandgap semiconductor materia...
In order to cater to modern day photovoltaic and solar needs, semiconductor materials which are eart...
Large-scale energy demands will require low-cost, earth-abundant materials for high efficiency solar...
International audienceThe nitrides of elements III such as AlxGayIn1-x-yN have been widely studied f...
Zinc tin nitride (ZnSnN2) is a promising semiconductor candidate for solar cell applications and opt...
International audienceZinc tin nitride (ZnSnN2) is a promising semiconductor candidate for solar cel...
ZnSnN_2 is an emerging wide band gap earth-abundant semiconductor with potential applications in pho...
Abstract — Large-scale energy demands will require low-cost, earth-abundant materials for high effi...
The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Gr...
Zinc tin nitride (ZnSnN2) thin films have been deposited by reactive magnetron co-sputtering at room...
This work is motivated by the need for new visible frequency direct bandgap semiconductor materials ...
We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnS...
Direct bandgap, earth abundant semiconductors with Eg around 1.5 eV are essential for both photovol...
Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron spu...
ZnSnN_2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovolt...
By literature reports, ZnSnN2 has been pointed out as a potential high bandgap semiconductor materia...
In order to cater to modern day photovoltaic and solar needs, semiconductor materials which are eart...
Large-scale energy demands will require low-cost, earth-abundant materials for high efficiency solar...
International audienceThe nitrides of elements III such as AlxGayIn1-x-yN have been widely studied f...
Zinc tin nitride (ZnSnN2) is a promising semiconductor candidate for solar cell applications and opt...
International audienceZinc tin nitride (ZnSnN2) is a promising semiconductor candidate for solar cel...
ZnSnN_2 is an emerging wide band gap earth-abundant semiconductor with potential applications in pho...
Abstract — Large-scale energy demands will require low-cost, earth-abundant materials for high effi...
The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Gr...
Zinc tin nitride (ZnSnN2) thin films have been deposited by reactive magnetron co-sputtering at room...
This work is motivated by the need for new visible frequency direct bandgap semiconductor materials ...
We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnS...
Direct bandgap, earth abundant semiconductors with Eg around 1.5 eV are essential for both photovol...
Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron spu...