On Finding a Simulation Model for Carbon Nanotubes as Through-Silicon-Vias

This paper outlines the electrical and thermal properties of carbon nanotubes (CNT) as a potential replacement for Copper (Cu) in through silicon vias (TSV). Cu has undesirable thermal properties, and CNTs could resolve issues that high density interconnects experience under high thermal loads around 100 C. Most notably, the coefficient of thermal expansion for CNTs is two orders of magnitude lesser than Cu [1]. The electrical and mechanical properties of CNTs under a high frequency load of 1 THz, and high thermal load of 100 C are simulated with ABAQUS 6.16. There is no observable skin effect modelled for the Cu or Single-Walled Carbon Nanotube (SWCNT) wires simulated in this paper