Add to ORKGWe present a setup and procedure of studying p-n junction–package thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and LED chip are separated
Authors focused on the research of heat dissipation problem in electronic devices. For this purpose,...
The junction temperature and thermal resistance of AlGaN and GaInN ultraviolet (UV) light-emitting d...
We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based lig...
We present a setup and procedure of studying p-n junction–package thermal resistance in high-power ...
High-power Light Emitting Diode (LED) generates significant amount of heat fluxes that can affect th...
High-power Light Emitting Diode (LED) generates significant amount of heat fluxes that can affect th...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
Thermal characterizations of high power light emitting diodes (LEDs) and laser diodes (LDs) are one ...
Deep ultraviolet (DUV) light emitting diodes (LEDs) based on group III-Nitrides have numerou...
Deep ultraviolet (DUV) light emitting diodes (LEDs) based on group III-Nitrides have numerou...
AbstractThe paper studies current spreading, light emission, and heat transfer in high-power flip-ch...
In this paper, a GaN-LED with sapphire structure and a thin-film LED without sapphire structure are ...
Optical and electrical characteristics of power light-emitting diodes (LEDs) are strongly dependent ...
We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device ov...
Besides their electrical properties the optical parameters of LEDs also depend on junction temperatu...
Authors focused on the research of heat dissipation problem in electronic devices. For this purpose,...
The junction temperature and thermal resistance of AlGaN and GaInN ultraviolet (UV) light-emitting d...
We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based lig...
We present a setup and procedure of studying p-n junction–package thermal resistance in high-power ...
High-power Light Emitting Diode (LED) generates significant amount of heat fluxes that can affect th...
High-power Light Emitting Diode (LED) generates significant amount of heat fluxes that can affect th...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
Thermal characterizations of high power light emitting diodes (LEDs) and laser diodes (LDs) are one ...
Deep ultraviolet (DUV) light emitting diodes (LEDs) based on group III-Nitrides have numerou...
Deep ultraviolet (DUV) light emitting diodes (LEDs) based on group III-Nitrides have numerou...
AbstractThe paper studies current spreading, light emission, and heat transfer in high-power flip-ch...
In this paper, a GaN-LED with sapphire structure and a thin-film LED without sapphire structure are ...
Optical and electrical characteristics of power light-emitting diodes (LEDs) are strongly dependent ...
We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device ov...
Besides their electrical properties the optical parameters of LEDs also depend on junction temperatu...
Authors focused on the research of heat dissipation problem in electronic devices. For this purpose,...
The junction temperature and thermal resistance of AlGaN and GaInN ultraviolet (UV) light-emitting d...
We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based lig...