A SiO2 powder has been coated by alumina using the Fluidized Bed Chemical Vapor Deposition process and a metal organic precursor, aluminium acetylacetonate (Al(acac)3 or C15H21AlO6) as single source. A range of low temperatures, i.e. 400–620 C has been explored at atmospheric pressure. Systematic characterizations were performed by Field Emission Gun Scanning Electron Microscopy (FEG-SEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), Fourier Transform Infra-Red (FT-IR) spectroscopy and Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES). The process involves a first step of gas phase reactions producing reactive intermediates, themselves leading to Al2O3 and carbon containing deposits. Between 400 and 500 C, ...
Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) is considered a prom...
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor tri...
Blittersdorf S, Bahlawane N, Kohse-Höinghaus K, Atakan B, Müller J. CVD of Al2O3 thin films using al...
International audienceA SiO2 powder has been coated by alumina using the Fluidized Bed Chemical Vapo...
A new route to deposit alumina nanometric thin films on powders from the single source Aluminum Tri-...
Producing alumina catalysts containing high amounts of penta-coordinated aluminum sites ([5]Al) is o...
Particles are widely used in the chemical industry as raw material and end product. In many applicat...
The facile synthesis of Al2O3 in the amorphous and corundum phase on both glass and quartz substrate...
We first present a Review about the preparation of alumina as thin films by the technique of MOCVD a...
Alumina and silica coatings have been deposited by MOCVD (Metal Organic Chemical Vapor Deposition) o...
This study investigates the use of atmospheric pressure chemical vapor deposition (APCVD) to produce...
This paper presents results on aluminum oxide thin films processed using metal–organic (MO) CVD from...
A study of the deposition of aluminium oxide films by low-pressure metalorganic chemical vapour depo...
We have deposited aluminium oxide films by atomic layer deposition on titanium oxide nanoparticles i...
Chemical vapour deposition and atomic layer deposition using precursors that are solids at ambient t...
Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) is considered a prom...
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor tri...
Blittersdorf S, Bahlawane N, Kohse-Höinghaus K, Atakan B, Müller J. CVD of Al2O3 thin films using al...
International audienceA SiO2 powder has been coated by alumina using the Fluidized Bed Chemical Vapo...
A new route to deposit alumina nanometric thin films on powders from the single source Aluminum Tri-...
Producing alumina catalysts containing high amounts of penta-coordinated aluminum sites ([5]Al) is o...
Particles are widely used in the chemical industry as raw material and end product. In many applicat...
The facile synthesis of Al2O3 in the amorphous and corundum phase on both glass and quartz substrate...
We first present a Review about the preparation of alumina as thin films by the technique of MOCVD a...
Alumina and silica coatings have been deposited by MOCVD (Metal Organic Chemical Vapor Deposition) o...
This study investigates the use of atmospheric pressure chemical vapor deposition (APCVD) to produce...
This paper presents results on aluminum oxide thin films processed using metal–organic (MO) CVD from...
A study of the deposition of aluminium oxide films by low-pressure metalorganic chemical vapour depo...
We have deposited aluminium oxide films by atomic layer deposition on titanium oxide nanoparticles i...
Chemical vapour deposition and atomic layer deposition using precursors that are solids at ambient t...
Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) is considered a prom...
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor tri...
Blittersdorf S, Bahlawane N, Kohse-Höinghaus K, Atakan B, Müller J. CVD of Al2O3 thin films using al...