Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors
- Virmontois, Cédric
- Goiffon, Vincent
- Magnan, Pierre
- Saint-Pé, Olivier
- Girard, Sylvain
- Petit, Sophie
- Rolland, Guy
- Bardoux, Alain
Publication date
January 2011
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) ISSN
0018-9499 Language
EnglishAbstract
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors. Discrepancies between both RTS are emphasised to better understand the microscopic origins of the phenomena
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