Growth of TiO2 thin films by AP-MOCVD on stainless steel substrates for photocatalytic applications

TiO2 thin films were deposited under atmospheric pressure by MOCVD in the temperature range 400–600 °C on stainless steel and Si(100) substrates. Titanium tetraisopropoxide (TTIP) was used as Ti and O source. Single-phased anatase and bi-phased (anatase/rutile) coatings with controlled composition have been deposited depending on the temperature and the TTIP mole fraction. The films grown on stainless steel at low temperature (b420 °C) and low TTIP mole fraction (b10−4) are constituted of pure anatase and they exhibit a high photocatalytic activity under UV light and a high hydrophilicity. In the temperature range 430–600 °C the rutile starts growing leading to anatase/rutile mixtures and subsequently to a progressive decrease of both photocatalytic activity and wettability. Correlations between functional properties and microstructure of the films are discussed