Add to ORKGThe AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidates for the next generation of high temperature, high frequency, high-power devices. The potential of GaN-based HEMTs may be improved using an AlInN barrier because of its better lattice match to GaN, resulting in higher sheet carrier densities without piezoelectric polarization [1]. This work has been focused on the study of AlInN HEMTs pulse and DC mode characterization at high temperature
In recent years, much research has been carried out on AlGaN/GaN high-electron-mobility transistors ...
International audienceThe aim of this article is to detect electron traps in AlInN/GaN transistors o...
International audienceThe aim of this article is to detect electron traps in AlInN/GaN transistors o...
The AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidate...
GaN-based high electron mobility transistors (HEMTs) have excellent performance for power applicatio...
GaN-based high electron mobility transistors (HEMTs) have excellent performance for power applicatio...
International audienceReliability in GaN based devices still motivates numerous studies because the ...
International audienceReliability in GaN based devices still motivates numerous studies because the ...
Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technolog...
Cataloged from PDF version of article.We investigate the structural and electrical properties of Alx...
AlInN has attracted much attention only recently as a material due to its unique and superior materi...
We investigate the structural and electrical properties of Al xIn 1-xN/AlN/GaN heterostructures with...
AlInN has attracted much attention only recently as a material due to its unique and superior materi...
Studies on the characteristics of AlGaN/GaN high-electron-mobility transistor (HEMTs) were performed...
We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron ...
In recent years, much research has been carried out on AlGaN/GaN high-electron-mobility transistors ...
International audienceThe aim of this article is to detect electron traps in AlInN/GaN transistors o...
International audienceThe aim of this article is to detect electron traps in AlInN/GaN transistors o...
The AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidate...
GaN-based high electron mobility transistors (HEMTs) have excellent performance for power applicatio...
GaN-based high electron mobility transistors (HEMTs) have excellent performance for power applicatio...
International audienceReliability in GaN based devices still motivates numerous studies because the ...
International audienceReliability in GaN based devices still motivates numerous studies because the ...
Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technolog...
Cataloged from PDF version of article.We investigate the structural and electrical properties of Alx...
AlInN has attracted much attention only recently as a material due to its unique and superior materi...
We investigate the structural and electrical properties of Al xIn 1-xN/AlN/GaN heterostructures with...
AlInN has attracted much attention only recently as a material due to its unique and superior materi...
Studies on the characteristics of AlGaN/GaN high-electron-mobility transistor (HEMTs) were performed...
We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron ...
In recent years, much research has been carried out on AlGaN/GaN high-electron-mobility transistors ...
International audienceThe aim of this article is to detect electron traps in AlInN/GaN transistors o...
International audienceThe aim of this article is to detect electron traps in AlInN/GaN transistors o...