Semiconductor nanowires (NWs) are fundamental structures for nanoscale devices. The excitation of NWs with laser beams results in thermal effects that can substantially change the spectral shape of the spectroscopic data. In particular, the interpretation of the Raman spectrum is greatly influenced by excitation induced temperature. A study of the interaction of the NWs with the excitation laser beam is essential to interpret the spectra. We present herein a finite element analysis of the interaction between the laser beam and the NWs. The resultas are applied to the interpretation of the Raman spectrum of bundles of NW
GaAs nanowires were heated locally under ambient air conditions by a focused laser beam which led to...
Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore,...
Nanowires (NWs) are filamentary crystals with diameters of tens of nanometers and lengths of few mic...
One presents in this work the study of the interaction between a focused laser beam and Si nanowires...
The use of laser beams as excitation sources for the characterization of semiconductor nanowires (NW...
Si Nanowires (NWs) were studied by Raman microspectroscopy. The Raman spectrum of the NWs reveals im...
AbstractGroup IV nanostructures have attracted a great deal of attention because of their potential ...
Group IV nanostructures have attracted a great deal of attention because of their potential applicat...
International audienceThe Raman spectrum of Si nanowires (NWs) is a matter of controversy. Usually, ...
Raman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depen...
Group IV nanostructures have attracted a great deal of attention because of their potential applicat...
The optical properties of semiconductor nanowires (NWs) are object of study because they are the bu...
We measure the effects of phonon confinement on the Raman spectra of silicon nanowires. We show how ...
Thesis (Ph.D.)--University of Washington, 2016-08Unique and novel applications of nanoscale material...
This paper demonstrates that free-standing silicon nanocrystals (Si NCs) have significantly differen...
GaAs nanowires were heated locally under ambient air conditions by a focused laser beam which led to...
Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore,...
Nanowires (NWs) are filamentary crystals with diameters of tens of nanometers and lengths of few mic...
One presents in this work the study of the interaction between a focused laser beam and Si nanowires...
The use of laser beams as excitation sources for the characterization of semiconductor nanowires (NW...
Si Nanowires (NWs) were studied by Raman microspectroscopy. The Raman spectrum of the NWs reveals im...
AbstractGroup IV nanostructures have attracted a great deal of attention because of their potential ...
Group IV nanostructures have attracted a great deal of attention because of their potential applicat...
International audienceThe Raman spectrum of Si nanowires (NWs) is a matter of controversy. Usually, ...
Raman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depen...
Group IV nanostructures have attracted a great deal of attention because of their potential applicat...
The optical properties of semiconductor nanowires (NWs) are object of study because they are the bu...
We measure the effects of phonon confinement on the Raman spectra of silicon nanowires. We show how ...
Thesis (Ph.D.)--University of Washington, 2016-08Unique and novel applications of nanoscale material...
This paper demonstrates that free-standing silicon nanocrystals (Si NCs) have significantly differen...
GaAs nanowires were heated locally under ambient air conditions by a focused laser beam which led to...
Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore,...
Nanowires (NWs) are filamentary crystals with diameters of tens of nanometers and lengths of few mic...