SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effectiv
n- and p-type Ge nanowires were synthesized by a multistep process in which axial elongation, via va...
Semiconductor nanowires, particularly group 14 semiconductor nanowires, have been the subject of int...
Ge nanowires (NW) due to their enhanced mobility can improve the electrical and optical properties o...
To maintain semiconductor device scaling, in recent years industry has been forced to move from plan...
DoctorA lot of research is performed as a composition of photonics using the advantages of nanowires...
Étude de la croissance de nanofils de SiGe par dépôt chimique en phase vapeur et caractérisation par...
Nanowires are promising materials for thermoelectrical or photovoltaïc microgenerators and as buildi...
The development of semiconductor nanowires has recently been the focus of extensive research as thes...
Low-Dimensional semiconducting material specially Silicon and Germanium are of the vastly studied sy...
Study of SiGe nanowires growth by chemical vapour deposition and characterization by atomic force mi...
The use of high quality semiconducting nanomaterials for advanced device applications has been hampe...
Thermoelectric devices directly convert heat into electricity or vice versa through simple structure...
We have grown various samples of Si and SiGe nanowires (NWs), either by a classical vapor?liquid?sol...
textSemiconductor nanowires are one-dimensional nanoscale systems that exhibit many unique propertie...
We report studies defining the diameter-dependent location of electrically active dopants in silicon...
n- and p-type Ge nanowires were synthesized by a multistep process in which axial elongation, via va...
Semiconductor nanowires, particularly group 14 semiconductor nanowires, have been the subject of int...
Ge nanowires (NW) due to their enhanced mobility can improve the electrical and optical properties o...
To maintain semiconductor device scaling, in recent years industry has been forced to move from plan...
DoctorA lot of research is performed as a composition of photonics using the advantages of nanowires...
Étude de la croissance de nanofils de SiGe par dépôt chimique en phase vapeur et caractérisation par...
Nanowires are promising materials for thermoelectrical or photovoltaïc microgenerators and as buildi...
The development of semiconductor nanowires has recently been the focus of extensive research as thes...
Low-Dimensional semiconducting material specially Silicon and Germanium are of the vastly studied sy...
Study of SiGe nanowires growth by chemical vapour deposition and characterization by atomic force mi...
The use of high quality semiconducting nanomaterials for advanced device applications has been hampe...
Thermoelectric devices directly convert heat into electricity or vice versa through simple structure...
We have grown various samples of Si and SiGe nanowires (NWs), either by a classical vapor?liquid?sol...
textSemiconductor nanowires are one-dimensional nanoscale systems that exhibit many unique propertie...
We report studies defining the diameter-dependent location of electrically active dopants in silicon...
n- and p-type Ge nanowires were synthesized by a multistep process in which axial elongation, via va...
Semiconductor nanowires, particularly group 14 semiconductor nanowires, have been the subject of int...
Ge nanowires (NW) due to their enhanced mobility can improve the electrical and optical properties o...