Add to ORKGOrdered arrays of III-Nitride nanocolumns are excellent candidates for the fabrication of nano-optoelectronic devices. Different technologies such as e-beam lithography or colloidal lithography, have been used to obtain ordered arrays. All these technologies have in common several processing steps that can affect the crystalline growth of the nanocolumns. In this work, we present a single lithographic step that permits to grow ordered GaN nanocolumns with different geometries. The patterning is based in the use of a focusedionbeam with different doses. With this method has been possible to create GaN nanopillars and nanocylinder
We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV se...
To extend the availability of nanostructure-based optoelectronic applications, vertically elongated ...
Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the fir...
Ordered arrays of III-Nitride nanocolumns are excellent candidates for the fabrication of nano-optoe...
E-beam lithography was used to pattern a titanium mask on a GaN substrate with ordered arrays of nan...
GaN/InGaN nanorods have attracted much scientific interest during the last decade because of their u...
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN na...
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN na...
Catalyst-free GaN nanorod regular arrays have been realized by reactive magnetron sputter epitaxy. T...
Catalyst-free GaN nanorod regular arrays have been realized by reactive magnetron sputter epitaxy. T...
Catalyst-free GaN nanorod regular arrays have been realized by reactive magnetron sputter epitaxy. T...
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN na...
Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the fir...
We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV se...
In this thesis, Gallium Nitride (GaN) micro- and nanostructures were fabricated based on focused ion...
We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV se...
To extend the availability of nanostructure-based optoelectronic applications, vertically elongated ...
Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the fir...
Ordered arrays of III-Nitride nanocolumns are excellent candidates for the fabrication of nano-optoe...
E-beam lithography was used to pattern a titanium mask on a GaN substrate with ordered arrays of nan...
GaN/InGaN nanorods have attracted much scientific interest during the last decade because of their u...
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN na...
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN na...
Catalyst-free GaN nanorod regular arrays have been realized by reactive magnetron sputter epitaxy. T...
Catalyst-free GaN nanorod regular arrays have been realized by reactive magnetron sputter epitaxy. T...
Catalyst-free GaN nanorod regular arrays have been realized by reactive magnetron sputter epitaxy. T...
Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN na...
Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the fir...
We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV se...
In this thesis, Gallium Nitride (GaN) micro- and nanostructures were fabricated based on focused ion...
We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV se...
To extend the availability of nanostructure-based optoelectronic applications, vertically elongated ...
Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the fir...