After the successful implementation of a record performing dual-junction solar cell at ultra high concentration, in this paper we present the transition to a triple-junction device. The semiconductor structure of the solar cells is presented and the main changes in respect to a dual-junction design are briefly discussed. Cross-sectional TEM analysis of samples confirms that the quality of the triple-junction structures grown by MOVPE is good, revealing no trace of antiphase disorder, and showing flat, sharp and clear interfaces between the layers. Triple-junction solar cells manufactured on these structures have shown a peak efficiency of 36.2% at 700X, maintaining the efficiency over 35% from 300 to 1200 suns. With some changes in the stru...
LGEP 2014 ID = 1656International audienceSingle junction Si solar cells dominate photovoltaics but a...
Triple-junction solar cells from III–V compound semiconductors have thus far delivered the highest s...
We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-jun...
After the successful implementation of a record performing dual-junction solar cell at ultra high co...
III–V compound semiconductors consist of elements out of the main groups III and V of the periodic t...
Multi-junction solar cells based on III-V materials have achieved the highest efficiencies of any pr...
III-V multi-junction solar cells have become standard in space and in terrestrial concentrator syste...
The paths towards high efficiency multijunction solar cells operating inside real concentrators at u...
This chapter discusses solar cells made of III–V semiconductors, and how they have reached efficienc...
Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching th...
Tunnel junctions are key for developing multijunction solar cells (MJSC) for ultra-high concentratio...
Based on recent cell improvements for space applications, multijunction cells apear to be ideal cand...
A novel architecture of cell structure tailored to ultra-high (>2000 suns) concentration ratios is p...
A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means...
[EN] Single junction Si solar cells dominate photovoltaics but are close to their efficiency limits....
LGEP 2014 ID = 1656International audienceSingle junction Si solar cells dominate photovoltaics but a...
Triple-junction solar cells from III–V compound semiconductors have thus far delivered the highest s...
We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-jun...
After the successful implementation of a record performing dual-junction solar cell at ultra high co...
III–V compound semiconductors consist of elements out of the main groups III and V of the periodic t...
Multi-junction solar cells based on III-V materials have achieved the highest efficiencies of any pr...
III-V multi-junction solar cells have become standard in space and in terrestrial concentrator syste...
The paths towards high efficiency multijunction solar cells operating inside real concentrators at u...
This chapter discusses solar cells made of III–V semiconductors, and how they have reached efficienc...
Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching th...
Tunnel junctions are key for developing multijunction solar cells (MJSC) for ultra-high concentratio...
Based on recent cell improvements for space applications, multijunction cells apear to be ideal cand...
A novel architecture of cell structure tailored to ultra-high (>2000 suns) concentration ratios is p...
A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means...
[EN] Single junction Si solar cells dominate photovoltaics but are close to their efficiency limits....
LGEP 2014 ID = 1656International audienceSingle junction Si solar cells dominate photovoltaics but a...
Triple-junction solar cells from III–V compound semiconductors have thus far delivered the highest s...
We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-jun...