The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures

The effect of post-growth rapid thermal annealing on the optical characteristics of InAsN/InGaAs dot-in-a-well DWELL structures grown by molecular beam epitaxy on GaAs(1 0 0) has been studied. InAs/InGaAs DWELL structures have been used as a reference. Photoluminescence measurements of these samples show similar optical effects, such as a blueshift of the peak wavelength and a reduction of the full width of at half maximum PL emission, in both types of structures up to an annealing temperature of 750 °C. Nevertheless, at 850 °C, these effects are much more pronounced in the structures with N. These results suggest that an additional As–N interdiffusion process inside the InAsN quantum dots plays a dominant role in these effects at high annealing temperatures (850 °C) on InAsN/InGaAs structures