A SWNT based non-volatile nano-electromechanical bi-stable switch for memory applications is proposed and fabricated. Conventional E-beam lithography and microfabrication methods are used to fabricate the switch while modified electric field assisted directed assembly process is used to assemble the SWNTs on to these fabricated structures. In this bi-stable switch the actuation of states are achieved at the same voltage when compared to several other SWNT electromechanical devices. Further modifications to the existing design would result in Latches, Flip-Flops, registers, etc which are the back bones of a computer processor chip. These devices can also be incorporated with existing CMOS process to fabricate other volatile memory devices
Since their discovery in 1998, Carbon Nanotube Field-Effect Transistors (CNTFETs) have gained consid...
We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a...
In this dissertation, CNTs based memory devices in particularly using CNTs as the electrode for RRAM...
In the last forty years the semiconductor industry focused on the downscaling process of the CMOS (C...
We exploit the remarkable low-friction bearing capabilities of multiwalled carbon nanotubes (MWNTs) ...
We demonstrated a prototype of nanoelectromechanical switch which was fabricated with single-walled ...
University of Minnesota Ph.D. dissertation. July 2011. Major: Electrical Engineering. Advisor: Prof....
Micro-/nanoelectromechanical (MEM/NEM) switches have been extensively studied to address the limitat...
Over the last few decades, complementary metal-oxide-semiconductor (CMOS) devices have been the driv...
The carbon nanotube/oxide/metal/crossed carbon nanotube (COMC) structure was first fabricated and de...
The main theme of this Ph.D. thesis is about the use of single-walled carbonnanotubes (SWCNTs) as me...
Fabrication and characterization of nanometre scale devices consisting of a suspended nanotube/nanow...
In recent years, several alternative devices have been proposed to deal with inherent limitation of ...
We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical...
Carbon nanotubes (CNTs) have been considered one of the most promising material to make nanodevices,...
Since their discovery in 1998, Carbon Nanotube Field-Effect Transistors (CNTFETs) have gained consid...
We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a...
In this dissertation, CNTs based memory devices in particularly using CNTs as the electrode for RRAM...
In the last forty years the semiconductor industry focused on the downscaling process of the CMOS (C...
We exploit the remarkable low-friction bearing capabilities of multiwalled carbon nanotubes (MWNTs) ...
We demonstrated a prototype of nanoelectromechanical switch which was fabricated with single-walled ...
University of Minnesota Ph.D. dissertation. July 2011. Major: Electrical Engineering. Advisor: Prof....
Micro-/nanoelectromechanical (MEM/NEM) switches have been extensively studied to address the limitat...
Over the last few decades, complementary metal-oxide-semiconductor (CMOS) devices have been the driv...
The carbon nanotube/oxide/metal/crossed carbon nanotube (COMC) structure was first fabricated and de...
The main theme of this Ph.D. thesis is about the use of single-walled carbonnanotubes (SWCNTs) as me...
Fabrication and characterization of nanometre scale devices consisting of a suspended nanotube/nanow...
In recent years, several alternative devices have been proposed to deal with inherent limitation of ...
We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical...
Carbon nanotubes (CNTs) have been considered one of the most promising material to make nanodevices,...
Since their discovery in 1998, Carbon Nanotube Field-Effect Transistors (CNTFETs) have gained consid...
We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a...
In this dissertation, CNTs based memory devices in particularly using CNTs as the electrode for RRAM...