III-V Semiconductor Lasers and Detectors

The subjects of this thesis can be divided into two main categories: III-V semiconductor lasers and detectors. The first two chapters are concerned with the InGaAsP/InP laser diodes. The final two chapters are related to fundamental problems in the avalanche photodiodes and the new class of quantum well infrared detectors. The kinetics of the mass transport phenomenon in InP is studied experimentally. Application of this technique to laser fabrication has resulted in very low threshold terrace mesa lasers. The continuing problem of the excess temperature sensitivity of InGaAsP lasers and light emitting diodes is studied in detail. Non-radiative Auger recombination and electron leakage are found to be important factors affecting the temperature sensitivities of these devices. Impact ionization in the GaAlSb system is investigated. The resonant nature of the enhanced impact ionization of holes is discussed. Further enhancement is predicted to be possible in quantum well structures. The new class of quantum well infrared detectors is described. Theoretical considerations on absorption coefficients and other parameters essential to device design and performance are discussed.