Add to ORKGThe limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenerately doped nanostructures. Quantum and high-field effects controlling the transport of carrier in nanostructures are described. The results obtained are applied to the modeling of a nanowire transisto
The ability to understand and model the performance limits of nanowire transistors is the key to the...
In this paper we investigate the transport properties of silicon nanowire FETs by using two differen...
In this paper we investigate the transport properties of silicon nanowire FETs by using two differe...
The nanowires and nanotubes are being considered as the best candidates for high-speed applications....
Understanding of quantum limit in low dimensional devices helps to develop the new device types same...
International audienceWe have performed atomistic simulations of the phonon-limited high field carri...
The effects of electric field on the carrier motion and drift velocity in nanowire (NW) are presente...
Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effec...
As devices continue scaling down into nanometer regime, carrier transport becomes critically importa...
A 20 band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model is used wit...
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effe...
Abstract—We present a simulation study of silicon nanowire transistors, based on an in-house code pr...
The modeling of nano-ballistic carrier transport nature across the nanoscale channel of a MOSFET bas...
Abstract—We present a simulation study of silicon nanowire transistors, based on an in-house code pr...
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transist...
The ability to understand and model the performance limits of nanowire transistors is the key to the...
In this paper we investigate the transport properties of silicon nanowire FETs by using two differen...
In this paper we investigate the transport properties of silicon nanowire FETs by using two differe...
The nanowires and nanotubes are being considered as the best candidates for high-speed applications....
Understanding of quantum limit in low dimensional devices helps to develop the new device types same...
International audienceWe have performed atomistic simulations of the phonon-limited high field carri...
The effects of electric field on the carrier motion and drift velocity in nanowire (NW) are presente...
Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effec...
As devices continue scaling down into nanometer regime, carrier transport becomes critically importa...
A 20 band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model is used wit...
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effe...
Abstract—We present a simulation study of silicon nanowire transistors, based on an in-house code pr...
The modeling of nano-ballistic carrier transport nature across the nanoscale channel of a MOSFET bas...
Abstract—We present a simulation study of silicon nanowire transistors, based on an in-house code pr...
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transist...
The ability to understand and model the performance limits of nanowire transistors is the key to the...
In this paper we investigate the transport properties of silicon nanowire FETs by using two differen...
In this paper we investigate the transport properties of silicon nanowire FETs by using two differe...