We report on the observation of structures in the longitudinal resistance of a single two-dimensional electron gas (2DEG) in a perpendicular magnetic field at filling factor νcongruent with1±0.1. The observed structures can be switched off by depleting a second 2DEG, which is separated from the first by a 30 nm or a 60 nm AlGaAs-barrier, using a gate-electrode. Measurements as a function of temperature and drive current indicate that these structures are precursors of the breakdown of the quantum-Hall-effect (QHE) at ν=1. The QHE becomes unstable when another 2DEG is in the neighbourhood. This effect is most likely due to macroscopic effects like screening, because other coupling processes between these two 2DEGs, such as frictional drag, a...
ff an Un bora ati ary ne 2The quantum Hall (QH) effect in two-dimensional electron and hole gas is s...
Magnetotransport characteristics of dilute two-dimensional hole gases (2DHGs) in Si/SiGe heterostruc...
The nonlinearities in the I-V characteristics have been studied of high-mobility Si metal oxide semi...
We report on the observation of structures in the longitudinal resistance of a single two-dimensiona...
In this work we have studied the properties of two-dimensional electron systems (2DES) in AlGaAs het...
The authors find that a sufficiently large perpendicular magnetic field (B{sub {perpendicular}}) cau...
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simult...
We observe a novel breakdown of the quantum Hall effect in a two-dimensional electron gas using a co...
Contains fulltext : 18860.pdf (publisher's version ) (Open Access)In solids, it is...
range (10- 1000 mK) where as the low mobility samples have a constant critical current at low temper...
We present the latest results of our transport measurements, in the quantum Hall (QH) regime, in two...
We have developed a novel technique that enables measurements of the breakdown of both the integer a...
We investigated magnetotransport in the two-dimensional electron gas (2DEG) present in InAs/AlSb qua...
The decay of quasi-persistent circulating currents in the dissipationless quantum Hall regime has be...
We predict resistance anomalies to be observed at high-mobility two-dimensional electron systems (2D...
ff an Un bora ati ary ne 2The quantum Hall (QH) effect in two-dimensional electron and hole gas is s...
Magnetotransport characteristics of dilute two-dimensional hole gases (2DHGs) in Si/SiGe heterostruc...
The nonlinearities in the I-V characteristics have been studied of high-mobility Si metal oxide semi...
We report on the observation of structures in the longitudinal resistance of a single two-dimensiona...
In this work we have studied the properties of two-dimensional electron systems (2DES) in AlGaAs het...
The authors find that a sufficiently large perpendicular magnetic field (B{sub {perpendicular}}) cau...
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simult...
We observe a novel breakdown of the quantum Hall effect in a two-dimensional electron gas using a co...
Contains fulltext : 18860.pdf (publisher's version ) (Open Access)In solids, it is...
range (10- 1000 mK) where as the low mobility samples have a constant critical current at low temper...
We present the latest results of our transport measurements, in the quantum Hall (QH) regime, in two...
We have developed a novel technique that enables measurements of the breakdown of both the integer a...
We investigated magnetotransport in the two-dimensional electron gas (2DEG) present in InAs/AlSb qua...
The decay of quasi-persistent circulating currents in the dissipationless quantum Hall regime has be...
We predict resistance anomalies to be observed at high-mobility two-dimensional electron systems (2D...
ff an Un bora ati ary ne 2The quantum Hall (QH) effect in two-dimensional electron and hole gas is s...
Magnetotransport characteristics of dilute two-dimensional hole gases (2DHGs) in Si/SiGe heterostruc...
The nonlinearities in the I-V characteristics have been studied of high-mobility Si metal oxide semi...