Spectroscopic ellipsometry has been used to determine the dielectric functions of ultrathin Ge/Si superlattices with varying strain states and periodicity at room temperature. The E1-like transitions could be resolved with the multiple-angle-of-incidence technique and in a thick, Ge-rich sample; they split up into various contributions and start to absorb the light at lower energies than compositionally equivalent alloys, as predicted theoretically. The E2 transitions are shifted towards lower energies and split into a doublet. Both of its components show a shift due to the hydrostatic component of the internal strain, which is approximately half of what one would expect from the corresponding deformation potentials of the constituent bulk ...
We report low temperature (77 K) eletroreflectance measurements on a series of GenSim strain-symmetr...
We used photocurrent spectroscopy at 300 K, 77 K and 4.2 K to investigate the optical absorption pro...
We used photocurrent spectroscopy at 300 K, 77 K and 4.2 K to investigate the optical absorption pro...
Spectroscopic ellipsometry has been used to determine the dielectric functions of ultrathin Ge/Si su...
Spectroscopic ellipsometry has been used to determine the dielectric functions of ultrathin Ge/Si su...
Spectroscopic ellipsometry has been used to determine the dielectric functions of ultrathin Ge/Si su...
Band-to-band infrared absorption has been studied in a series of Sn1Gem (m=11, 15, and 21) strained ...
Band-to-band infrared absorption has been studied in a series of Sn1Gem (m=11, 15, and 21) strained ...
We present a calculation of both electronic energy levels and intensities of optical transitions in ...
In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge ...
We report low temperature (77 K) electroreflectance measurements on a series of Ge(n) Si(m) strain-s...
A method was provided for treating the optical response of Si/Ge superlattices (SL) with embedded Ge...
We present a numerical study of the electronic and optical properties of a model single-element supe...
Strained-layer superlattices (SLS) composed of a sequence of ultrathin Si and Ge layers are grown on...
A method was provided for treating the optical response of Si/Ge superlattices (SL) with embedded Ge...
We report low temperature (77 K) eletroreflectance measurements on a series of GenSim strain-symmetr...
We used photocurrent spectroscopy at 300 K, 77 K and 4.2 K to investigate the optical absorption pro...
We used photocurrent spectroscopy at 300 K, 77 K and 4.2 K to investigate the optical absorption pro...
Spectroscopic ellipsometry has been used to determine the dielectric functions of ultrathin Ge/Si su...
Spectroscopic ellipsometry has been used to determine the dielectric functions of ultrathin Ge/Si su...
Spectroscopic ellipsometry has been used to determine the dielectric functions of ultrathin Ge/Si su...
Band-to-band infrared absorption has been studied in a series of Sn1Gem (m=11, 15, and 21) strained ...
Band-to-band infrared absorption has been studied in a series of Sn1Gem (m=11, 15, and 21) strained ...
We present a calculation of both electronic energy levels and intensities of optical transitions in ...
In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge ...
We report low temperature (77 K) electroreflectance measurements on a series of Ge(n) Si(m) strain-s...
A method was provided for treating the optical response of Si/Ge superlattices (SL) with embedded Ge...
We present a numerical study of the electronic and optical properties of a model single-element supe...
Strained-layer superlattices (SLS) composed of a sequence of ultrathin Si and Ge layers are grown on...
A method was provided for treating the optical response of Si/Ge superlattices (SL) with embedded Ge...
We report low temperature (77 K) eletroreflectance measurements on a series of GenSim strain-symmetr...
We used photocurrent spectroscopy at 300 K, 77 K and 4.2 K to investigate the optical absorption pro...
We used photocurrent spectroscopy at 300 K, 77 K and 4.2 K to investigate the optical absorption pro...