We study the emission of photons from porous Si after high-level vibrational excitation in the Si-O absorption band using a pulsed CO2 laser. Narrow resonances in the efficiency of light generation are discovered at 1030 and 1084 cm-1. Time-resolved experiments on the luminescence and the ir-induced changes in optical transparency show that the two excitation modes are characterized by different temporal responses. Additionally, their spectral distributions differ substantially. For excitation at 1030 cm-1 the familiar photoluminescence band of porous Si appears. We suggest microscopic processes responsible for the light emissions
A porous silicon lm (PS) was investigated by FTIR, Raman and photoluminescence (PL) spectro-scopies....
Almost all physical processes in solids are influenced by phonons, but their effect is frequently ov...
The variation with excitation wavelength of a two-band structure in photoluminescence spectra from p...
We study the emission of photons from porous Si after high-level vibrational excitation in the Si-O ...
We study the emission of photons from porous Si after high-level vibrational excitation in the Si---...
We study the emission of photons from porous Si after high-level vibrational excitation in the Si---...
Exposed to strong laser in air, the photoluminescence (PL) peak position of porous silicon (PS) shif...
Porous silicon is excited using near-infrared femtosecond pulsed and continuous wave radiation at an...
A porous silicon lm (PS) was investigated by FTIR, Raman and photoluminescence (PL) spectroscopies. ...
The variation of photoluminescence spectra for porous silicon at room temperature with excitation wa...
A porous silicon lm (PS) was investigated by FTIR, Raman and photoluminescence (PL) spectroscopies. ...
A comparative study of photoluminescence (PL) and photoluminescence excitation (PLE) spectra of poro...
An investigation of the red photoluminescence (PL) in uniform layers of porous silicon has revealed ...
We have systematically observed at room temperature the variations of photoluminescence(PL) from por...
The PL intensity increases at first, then, decreases with the increase of processing time and reache...
A porous silicon lm (PS) was investigated by FTIR, Raman and photoluminescence (PL) spectro-scopies....
Almost all physical processes in solids are influenced by phonons, but their effect is frequently ov...
The variation with excitation wavelength of a two-band structure in photoluminescence spectra from p...
We study the emission of photons from porous Si after high-level vibrational excitation in the Si-O ...
We study the emission of photons from porous Si after high-level vibrational excitation in the Si---...
We study the emission of photons from porous Si after high-level vibrational excitation in the Si---...
Exposed to strong laser in air, the photoluminescence (PL) peak position of porous silicon (PS) shif...
Porous silicon is excited using near-infrared femtosecond pulsed and continuous wave radiation at an...
A porous silicon lm (PS) was investigated by FTIR, Raman and photoluminescence (PL) spectroscopies. ...
The variation of photoluminescence spectra for porous silicon at room temperature with excitation wa...
A porous silicon lm (PS) was investigated by FTIR, Raman and photoluminescence (PL) spectroscopies. ...
A comparative study of photoluminescence (PL) and photoluminescence excitation (PLE) spectra of poro...
An investigation of the red photoluminescence (PL) in uniform layers of porous silicon has revealed ...
We have systematically observed at room temperature the variations of photoluminescence(PL) from por...
The PL intensity increases at first, then, decreases with the increase of processing time and reache...
A porous silicon lm (PS) was investigated by FTIR, Raman and photoluminescence (PL) spectro-scopies....
Almost all physical processes in solids are influenced by phonons, but their effect is frequently ov...
The variation with excitation wavelength of a two-band structure in photoluminescence spectra from p...