We study the emission of photons from porous Si after high-level vibrational excitation in the Si---O absorption band using a pulsed CO2 laser. Narrow resonances in the efficiency of light generation are discovered at 1030 cm−1 and 1084 cm−1. For excitation at 1030 cm−1 the familiar photoluminescence band of porous Si appears. Time-resolved pump-to-probe experiments show the same decay times for the photo and the IR-induced luminescence. We suggest a microscopic process responsible for the light emission
A comparative study of photoluminescence (PL) and photoluminescence excitation (PLE) spectra of poro...
Recent observations of photoluminescene (PL) and electroluminescence (EL) from poroussilicon (PS) ha...
The origin of the photoluminescence (PL) shifts in Porous Silicon (PS) is discussed according to a q...
We study the emission of photons from porous Si after high-level vibrational excitation in the Si---...
We study the emission of photons from porous Si after high-level vibrational excitation in the Si-O ...
We study the emission of photons from porous Si after high-level vibrational excitation in the Si-O ...
Exposed to strong laser in air, the photoluminescence (PL) peak position of porous silicon (PS) shif...
The PL intensity increases at first, then, decreases with the increase of processing time and reache...
Time resolved photoluminescence of porous silicon at room temperature was measured for several emiss...
The aim is to determine the stationary and kinetic characteristics of the porous silicon (PS) lumine...
In this paper we discuss the different models proposed to explain the visible luminescence in porous...
Texto completo: acesso restrito.p.2064-2073The most extensive data set yet generated correlating ph...
The dynamics of the infrared photoluminescence (PL) in silicon powder grown by plasma-enhanced chemi...
The dynamics of the infrared photoluminescence (PL) in silicon powder grown by plasma-enhanced chemi...
Almost all physical processes in solids are influenced by phonons, but their effect is frequently ov...
A comparative study of photoluminescence (PL) and photoluminescence excitation (PLE) spectra of poro...
Recent observations of photoluminescene (PL) and electroluminescence (EL) from poroussilicon (PS) ha...
The origin of the photoluminescence (PL) shifts in Porous Silicon (PS) is discussed according to a q...
We study the emission of photons from porous Si after high-level vibrational excitation in the Si---...
We study the emission of photons from porous Si after high-level vibrational excitation in the Si-O ...
We study the emission of photons from porous Si after high-level vibrational excitation in the Si-O ...
Exposed to strong laser in air, the photoluminescence (PL) peak position of porous silicon (PS) shif...
The PL intensity increases at first, then, decreases with the increase of processing time and reache...
Time resolved photoluminescence of porous silicon at room temperature was measured for several emiss...
The aim is to determine the stationary and kinetic characteristics of the porous silicon (PS) lumine...
In this paper we discuss the different models proposed to explain the visible luminescence in porous...
Texto completo: acesso restrito.p.2064-2073The most extensive data set yet generated correlating ph...
The dynamics of the infrared photoluminescence (PL) in silicon powder grown by plasma-enhanced chemi...
The dynamics of the infrared photoluminescence (PL) in silicon powder grown by plasma-enhanced chemi...
Almost all physical processes in solids are influenced by phonons, but their effect is frequently ov...
A comparative study of photoluminescence (PL) and photoluminescence excitation (PLE) spectra of poro...
Recent observations of photoluminescene (PL) and electroluminescence (EL) from poroussilicon (PS) ha...
The origin of the photoluminescence (PL) shifts in Porous Silicon (PS) is discussed according to a q...