A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is shown that the CPGE becomes possible because of the built-in asymmetry of quantum wells (QWs) in compositionally stepped samples and in asymmetrically doped structures. The photocurrent arises due to optical spin orientation of free carriers in QWs with spin splitting in k-space. It is shown that the effect can be applied to probe the macroscopic in-plane symmetry of low dimensional structures and allowing to conclude on Rashba or Dresselhaus terms in the Hamiltonian
Spintronics utilizes the electron’s spin degree of freedom as information carrier. The basis of this...
The spin-galvanic effect and the inverse effect, which yeilds current induced spin polarization, in ...
The spin-galvanic effect generated by homogeneous optical excitation with infrared circularly polari...
A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is ...
A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is ...
We report on the first observation of the circular photogalvanic effect (CPGE) induced by optical mo...
The photogalvanic effects, which require a system lacking inversion symmetry, become possible in SiG...
The circular photogalvanic effect (CPGE) has been observed in (100)-oriented p-GaAs/AlGaAs quantum w...
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are ...
Circular and linear photogalvanic effects induced by far-infrared radiation have been investigated i...
We report on the observation of the circular photogalvanic effect in Si-metal-oxide-semiconductor fi...
We report the magnetogyrotropic photogalvanic effect(MPGE)in n-doped (110)-grown GaAs/AlGaAs quantum...
Spin photocurrents generated by homogeneous optical excitation with circularly polarized radiation i...
We report on the first observation of the circular photogalvanic effect (CPGE) induced by optical mo...
Spintronics utilizes the electron’s spin degree of freedom as information carrier. The basis of this...
The spin-galvanic effect and the inverse effect, which yeilds current induced spin polarization, in ...
The spin-galvanic effect generated by homogeneous optical excitation with infrared circularly polari...
A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is ...
A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is ...
We report on the first observation of the circular photogalvanic effect (CPGE) induced by optical mo...
The photogalvanic effects, which require a system lacking inversion symmetry, become possible in SiG...
The circular photogalvanic effect (CPGE) has been observed in (100)-oriented p-GaAs/AlGaAs quantum w...
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are ...
Circular and linear photogalvanic effects induced by far-infrared radiation have been investigated i...
We report on the observation of the circular photogalvanic effect in Si-metal-oxide-semiconductor fi...
We report the magnetogyrotropic photogalvanic effect(MPGE)in n-doped (110)-grown GaAs/AlGaAs quantum...
Spin photocurrents generated by homogeneous optical excitation with circularly polarized radiation i...
We report on the first observation of the circular photogalvanic effect (CPGE) induced by optical mo...
Spintronics utilizes the electron’s spin degree of freedom as information carrier. The basis of this...
The spin-galvanic effect and the inverse effect, which yeilds current induced spin polarization, in ...
The spin-galvanic effect generated by homogeneous optical excitation with infrared circularly polari...