Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells
- Bel'kov, V.
- Ganichev, Sergey
- Schneider, Petra
- Back, Christian
- Oestreich, M.
- Rudolf, J.
- Hägele, D.
- Golub, L.
- Wegscheider, Werner
- Prettl, Wilhelm
DOIAbstract
We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands
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