A quantum cascade emitter structure is suggested that is based on electronic transitions in an artificial band structure of coupled quantum wires in contrast to the conventional quantum layer systems. The electron transport is normal to the wires in a GaAs/Al_xGa_{1–x}As heterostructure produced by the cleaved-edge overgrowth method. For a realistic system of this type, the relevant rates of radiative transitions and of nonradiative transitions mediated by longitudinal optical phonons have been calculated and have been compared with corresponding data for quantum cascade emitters based on layered structures
We calculated the material gain and the threshold current density for quantum wire intersubband las...
We carried out micro-photoluminescence studies of doped multiple quantum wire structures grown by th...
We calculated the material gain and the threshold current density for quantum wire intersubband las...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an art...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs)...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs)...
A novel mid infrared emitting GaAs/AlGaAs quantum wire cascade device is presented that is fabrica...
A novel mid infrared emitting GaAs/AlGaAs quantum wire cascade device is presented that is fabrica...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs) h...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs) h...
We discuss the influence of current-induced heating on the current-voltage (I-V) characteristics and...
We discuss the influence of current-induced heating on the current-voltage (I-V) characteristics and...
We calculated the material gain and the threshold current density for quantum wire intersubband las...
We carried out micro-photoluminescence studies of doped multiple quantum wire structures grown by th...
We calculated the material gain and the threshold current density for quantum wire intersubband las...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an art...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs)...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs)...
A novel mid infrared emitting GaAs/AlGaAs quantum wire cascade device is presented that is fabrica...
A novel mid infrared emitting GaAs/AlGaAs quantum wire cascade device is presented that is fabrica...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs) h...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs) h...
We discuss the influence of current-induced heating on the current-voltage (I-V) characteristics and...
We discuss the influence of current-induced heating on the current-voltage (I-V) characteristics and...
We calculated the material gain and the threshold current density for quantum wire intersubband las...
We carried out micro-photoluminescence studies of doped multiple quantum wire structures grown by th...
We calculated the material gain and the threshold current density for quantum wire intersubband las...