A novel mid infrared emitting GaAs/AlGaAs quantum wire cascade device is presented that is fabricated using the cleaved edge overgrowth technique. The samples are pumped electrically. Radiative electronic transitions between discrete energy levels in coupled quantum wires are calculated for such a structure. Operation current dependent mid infrared emission is observed at a peak wave number of 1200 cm^-1 with a full-width at half-maximum of 300 cm^-1 at a heat sink temperature of 20 K. The presented sample is an experimental proposal for an unipolar quantum wire intersubband laser
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
100 mW per facet. The laser emission wavelengths range from 9.5 mu m to 13.2 mu m. The highest maxim...
This paper describes novel semiconductor quantum wire infrared photodetectors in the long- and very ...
A novel mid infrared emitting GaAs/AlGaAs quantum wire cascade device is presented that is fabrica...
This thesis explores the development of mid-infrared (A- 8- 12 pm) quantum cascade lasers developed ...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an art...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs)...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an art...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs)...
We discuss the influence of current-induced heating on the current-voltage (I-V) characteristics and...
We discuss the influence of current-induced heating on the current-voltage (I-V) characteristics and...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs) h...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs) h...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
100 mW per facet. The laser emission wavelengths range from 9.5 mu m to 13.2 mu m. The highest maxim...
This paper describes novel semiconductor quantum wire infrared photodetectors in the long- and very ...
A novel mid infrared emitting GaAs/AlGaAs quantum wire cascade device is presented that is fabrica...
This thesis explores the development of mid-infrared (A- 8- 12 pm) quantum cascade lasers developed ...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an art...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs)...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an art...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs)...
We discuss the influence of current-induced heating on the current-voltage (I-V) characteristics and...
We discuss the influence of current-induced heating on the current-voltage (I-V) characteristics and...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs) h...
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs) h...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
A quantum cascade emitter structure is suggested that is based on electronic transitions in an artif...
100 mW per facet. The laser emission wavelengths range from 9.5 mu m to 13.2 mu m. The highest maxim...
This paper describes novel semiconductor quantum wire infrared photodetectors in the long- and very ...