Cu2O films were grown on n-Si substrates via the sol-gel spin-coating method. The films were annealed under 5% H2 + 95% N2 atmosphere at 350°C, 450°C and 550°C. Diffractogram obtained by the grazing angle x-ray diffractometry showed that the crystallinity of the films increased with increasing annealing temperature. Scanning electron microscopy micrographs revealed that the Cu2O films contain grains of irregular size indicating that the film growth followed the Volmer-Weber growth mode. The micrographs showed the size evolved from irregular shapes with average size of 100 nm at 350°C into rectangular shapes with average size of 200 nm at 550°C. Optical reflectance for 450°C and 550°C film increased gradually at wavelength 480 nm. Higher re...
Copper oxide thin films with thickness of 0.45 mu m were chemically deposited on glass substrates by...
Copper oxide thin films with thickness of 0.45 μm were chemically deposited on glass substrates by d...
In this work, copper oxide (I) thin films are deposited by silar method at 70 °C on a glass substrat...
Cu2O films were grown on n-Si substrates via the sol-gel spin-coating method. The films were anneale...
Cuprous oxide films were successfully grown onto a n-Si substrate with (100) orientation via sol-gel...
Cuprous oxide thin films were successfully grown on indium tin oxide (ITO) coated glass by sol-gel s...
In this study, cuprous oxide (Cu2O) films were prepared using four different copper salt ((CH3COO)2C...
In this work, copper oxide (I) (Cu2O) thin films are deposited by SILAR method at different tempera...
In this work, we reported the synthesis of copper oxide (CuO) thin films by sol-gel process assisted...
Cu2O semiconductor thin films are deposited by SILAR Method at 70°C temperature on commercial micro...
Thin films of copper oxide were grown by radio frequency-magnetron sputtering in an oxygen-argon env...
Cuprous oxide (Cu2O) thin films were prepared for the different weights (0.08, 0.09, 0.10, 0.13, and...
Cu2O film was deposited on a glass substrate at 70 °C by the SILAR (Successive Ionic Layer Adsorptio...
In this work, copper oxide (I) (Cu2O) thin films are deposited by SILAR method at different tempera...
The Cu2O and CuO thin films were synthesized by using RF sputtering technique. Comparisons were made...
Copper oxide thin films with thickness of 0.45 mu m were chemically deposited on glass substrates by...
Copper oxide thin films with thickness of 0.45 μm were chemically deposited on glass substrates by d...
In this work, copper oxide (I) thin films are deposited by silar method at 70 °C on a glass substrat...
Cu2O films were grown on n-Si substrates via the sol-gel spin-coating method. The films were anneale...
Cuprous oxide films were successfully grown onto a n-Si substrate with (100) orientation via sol-gel...
Cuprous oxide thin films were successfully grown on indium tin oxide (ITO) coated glass by sol-gel s...
In this study, cuprous oxide (Cu2O) films were prepared using four different copper salt ((CH3COO)2C...
In this work, copper oxide (I) (Cu2O) thin films are deposited by SILAR method at different tempera...
In this work, we reported the synthesis of copper oxide (CuO) thin films by sol-gel process assisted...
Cu2O semiconductor thin films are deposited by SILAR Method at 70°C temperature on commercial micro...
Thin films of copper oxide were grown by radio frequency-magnetron sputtering in an oxygen-argon env...
Cuprous oxide (Cu2O) thin films were prepared for the different weights (0.08, 0.09, 0.10, 0.13, and...
Cu2O film was deposited on a glass substrate at 70 °C by the SILAR (Successive Ionic Layer Adsorptio...
In this work, copper oxide (I) (Cu2O) thin films are deposited by SILAR method at different tempera...
The Cu2O and CuO thin films were synthesized by using RF sputtering technique. Comparisons were made...
Copper oxide thin films with thickness of 0.45 mu m were chemically deposited on glass substrates by...
Copper oxide thin films with thickness of 0.45 μm were chemically deposited on glass substrates by d...
In this work, copper oxide (I) thin films are deposited by silar method at 70 °C on a glass substrat...