We present experimental results for hybrid ferromagnet/semiconductor devices in which 2D electrons propagate through sub-micron width magnet barriers. Magnetoresistances, MR, of similar to ∼1000% are found at low temperatures and similar to ∼1% at room temperature. We compared the measured behavior with numerical calculations and give the conditions needed to achieve large room temperature MR
Narrow conducting channels have been fabricated in the two dimensional electron gas in a GaAs-AlGaAs...
We report experimental transport measurements of a vertical hybrid ferromagnetic (FM)/III-V semicond...
Narrow conducting channels have been fabricated in the two dimensional electron gas in a GaAs-AlGaAs...
Abstract—We present experimental results for hybrid ferro-magnet/semiconductor devices in which 2D e...
This thesis describes an experimental study a new class of hybrid ferromagnetic/semiconductor device...
Large changes in the electrical resistance induced by the application of a small magnetic field are ...
Large changes in the electrical resistance induced by the application of a small magnetic field are ...
Large changes in the electrical resistance induced by the application of a small magnetic field are ...
We study theoretically the giant magnetoresistance (GMR) effect of 2-dimensional electron system (2D...
A magnetic "spin filter" tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal...
Engineering devices with a large electrical response to magnetic field is of fundamental importance ...
A magnetic "spin filter" tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal...
A magnetic "spin filter" tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal...
A magnetic "spin filter" tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal...
A magnetic "spin filter" tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal...
Narrow conducting channels have been fabricated in the two dimensional electron gas in a GaAs-AlGaAs...
We report experimental transport measurements of a vertical hybrid ferromagnetic (FM)/III-V semicond...
Narrow conducting channels have been fabricated in the two dimensional electron gas in a GaAs-AlGaAs...
Abstract—We present experimental results for hybrid ferro-magnet/semiconductor devices in which 2D e...
This thesis describes an experimental study a new class of hybrid ferromagnetic/semiconductor device...
Large changes in the electrical resistance induced by the application of a small magnetic field are ...
Large changes in the electrical resistance induced by the application of a small magnetic field are ...
Large changes in the electrical resistance induced by the application of a small magnetic field are ...
We study theoretically the giant magnetoresistance (GMR) effect of 2-dimensional electron system (2D...
A magnetic "spin filter" tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal...
Engineering devices with a large electrical response to magnetic field is of fundamental importance ...
A magnetic "spin filter" tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal...
A magnetic "spin filter" tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal...
A magnetic "spin filter" tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal...
A magnetic "spin filter" tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal...
Narrow conducting channels have been fabricated in the two dimensional electron gas in a GaAs-AlGaAs...
We report experimental transport measurements of a vertical hybrid ferromagnetic (FM)/III-V semicond...
Narrow conducting channels have been fabricated in the two dimensional electron gas in a GaAs-AlGaAs...