The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces
- Holtslag, A.H.M.
- Slager, U.C.
- Silfhout, A. van
Publication date
January 1985
DOI Publisher
North-Holland ISSN
0039-6028 Language
English Citation count (estimate)
8Abstract
Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated
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