We developed an rf-based reactive co-sputtering process which resulted in uniform, reproducible deposition of low-loss $Al_{2}O_{3}$ waveguides. Due to their high optical quality these layers are promising host materials for rare-earth doped integrated optical devices
Erbium-doped aluminum oxide (Al2O3:Er) is a promising material for integrated amplifier or tunable l...
Miniaturization and on-chip integration of high-performance light sources have become major issues f...
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Comput...
In this paper we will present the fabrication and properties of reactively co-sputtered $AL_{2}O_{3}...
In this paper we will present the fabrication and properties of reactively co-sputtered Al2O3 layers...
Growth of reactively co-sputtered $Al_2O_3$ layers and micro-structuring using reactive ion etching ...
A reliable and reproducible deposition process for the fabrication of $Al_2O_3$ waveguides with loss...
Reactive co-sputtering has been applied as a low-cost method for deposition of $Al_2O_3:Er^{3+}$ lay...
Reactively co-sputtered amorphous $Al_2O_3$ waveguide layers with low propagation losses have been d...
Reactively co-sputtered amorphous $Al_2O_3$ waveguide layers with low propagation losses have been d...
Reactively co-sputtered amorphous aluminum oxide layers with low loss (0.11 dB/cm at NIR wavelength)...
$Al_{2}O_{3}$ and $Y_{2}O_{3}$ are both very promising host materials for active integrated optics a...
Al2O3 and Y2O3 are both very promising host materials for active integrated optics applications such...
Miniaturization and on-chip integration of high-performance light sources have become major issues f...
Er concentration, energy-transfer upconversion and gain were investigated in Er-doped aluminum oxide...
Erbium-doped aluminum oxide (Al2O3:Er) is a promising material for integrated amplifier or tunable l...
Miniaturization and on-chip integration of high-performance light sources have become major issues f...
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Comput...
In this paper we will present the fabrication and properties of reactively co-sputtered $AL_{2}O_{3}...
In this paper we will present the fabrication and properties of reactively co-sputtered Al2O3 layers...
Growth of reactively co-sputtered $Al_2O_3$ layers and micro-structuring using reactive ion etching ...
A reliable and reproducible deposition process for the fabrication of $Al_2O_3$ waveguides with loss...
Reactive co-sputtering has been applied as a low-cost method for deposition of $Al_2O_3:Er^{3+}$ lay...
Reactively co-sputtered amorphous $Al_2O_3$ waveguide layers with low propagation losses have been d...
Reactively co-sputtered amorphous $Al_2O_3$ waveguide layers with low propagation losses have been d...
Reactively co-sputtered amorphous aluminum oxide layers with low loss (0.11 dB/cm at NIR wavelength)...
$Al_{2}O_{3}$ and $Y_{2}O_{3}$ are both very promising host materials for active integrated optics a...
Al2O3 and Y2O3 are both very promising host materials for active integrated optics applications such...
Miniaturization and on-chip integration of high-performance light sources have become major issues f...
Er concentration, energy-transfer upconversion and gain were investigated in Er-doped aluminum oxide...
Erbium-doped aluminum oxide (Al2O3:Er) is a promising material for integrated amplifier or tunable l...
Miniaturization and on-chip integration of high-performance light sources have become major issues f...
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Comput...