A theoretical and experimental study of the exciton in ultra-narrow quantum wells (QWs) is performed. A crossover from strong (separate localization of electron and hole levels) to weak confinement (with localization of excitonic center of mass) is predicted to occur for decreasing thickness, and is characterized by a minimum of the oscillator strength per unit area. Cathodoluminescence measurements performed on a series of GaAs/Al0.35Ga0.65As QWs with thicknesses from one to eight monolayers show a minimum of the oscillator strength, in agreement with theory, and indicate that the crossover from strong to weak confinement occurs at a thickness of about three monolayers for this composition
The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlG...
The rising time of the excitonic luminescence in GaAs/AlGaAs quantum wells is studied as a function ...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
A theoretical and experimental study of the exciton in ultra-narrow quantum wells (QWs) is performed...
A theoretical and experimental study of the exciton in ultra-narrow quantum wells (QWs) is performed...
We present a theoretical study of the crossover from the two-dimensional (2D, separate confinement o...
A model for calculating exciton binding energies in quantum wells (QWs) is presented, which can be a...
For a single GaAs/AlAs/GaAs type II pseudodirect double quantum well, as well as for superlattices i...
The planar radius and the binding energy of excitons in extremely shallow quantum well (ESQW) struct...
We have studied the radiative excitonic lifetime as a function of the well width in GaAs/GaAlAs quan...
Lines corresponding to localized excitonic states formed from “above-barrier” electron and/or hole s...
We have studied the photoluminescence (PL) properties of a GaAs/AlxGa1−xAs quantum well (QW) system ...
Photoluminescence measurements at different temperatures have been performed to investigate the effe...
The linewidth of the free exciton photoluminescence peak has been observed to broaden when the sampl...
Exciton quantization and oscillator strength are studied for three different geometries of confineme...
The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlG...
The rising time of the excitonic luminescence in GaAs/AlGaAs quantum wells is studied as a function ...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...
A theoretical and experimental study of the exciton in ultra-narrow quantum wells (QWs) is performed...
A theoretical and experimental study of the exciton in ultra-narrow quantum wells (QWs) is performed...
We present a theoretical study of the crossover from the two-dimensional (2D, separate confinement o...
A model for calculating exciton binding energies in quantum wells (QWs) is presented, which can be a...
For a single GaAs/AlAs/GaAs type II pseudodirect double quantum well, as well as for superlattices i...
The planar radius and the binding energy of excitons in extremely shallow quantum well (ESQW) struct...
We have studied the radiative excitonic lifetime as a function of the well width in GaAs/GaAlAs quan...
Lines corresponding to localized excitonic states formed from “above-barrier” electron and/or hole s...
We have studied the photoluminescence (PL) properties of a GaAs/AlxGa1−xAs quantum well (QW) system ...
Photoluminescence measurements at different temperatures have been performed to investigate the effe...
The linewidth of the free exciton photoluminescence peak has been observed to broaden when the sampl...
Exciton quantization and oscillator strength are studied for three different geometries of confineme...
The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlG...
The rising time of the excitonic luminescence in GaAs/AlGaAs quantum wells is studied as a function ...
This paper discusses the theoretical and experimental results obtained for the excitonic binding ene...