a-Si1xNx:H thin films grown by PECVD in a wide compositional range were characterized by spectroscopic ellipsometry and Mach-Zehnder interferometry. Taking advantage from their optical properties, the alloys were fruitfully applied for stratified structures such as distributed Bragg reflectors, conventional and double resonance optical microcavitie
Optical (refractive index) and structural properties of silicon oxynitride (SiON) and amorphous sil...
Optical (refractive index) and structural properties of silicon oxynitride (SiON) and amorphous sil...
We have analyzed the influence of rapid thermal annealing (from 300 to 1050 degrees C) on the optica...
a-Si1xNx:H thin films grown by PECVD in a wide compositional range were characterized by spectroscop...
a-Si1-xNx:H thin films grown by PECVD in a wide compositional range were characterized by spectrosco...
a-Si1-xNx:H thin films grown by PECVD in a wide compositional range were characterized by spectrosco...
Hydrogenated amorphous silicon-nitrides (a-SiNx:H) and -oxycarbides (a-SiOxCy:H) were grown by plasm...
Hydrogenated amorphous silicon-nitrides (a-SiNx:H) and -oxycarbides (a-SiOxCy:H) were grown by plasm...
Amorphous silicon-nitrogen (a-Si1-xNx:H) alloys with x in the range 0.01-0.57 have been deposited in...
It has been reported earlier that the attenuation lengths of photoelectrons from very thin amorphous...
International audienceThe aim of this work is to determine optimal deposition parameters of silicon ...
International audienceThe aim of this work is to determine optimal deposition parameters of silicon ...
Spectroscopic Ellipsometry (SE) is a powerful and universal optical technique for the investigation ...
International audienceThe aim of this work is to determine optimal deposition parameters of silicon ...
Spectroscopic Ellipsometry (SE) is a powerful and universal optical technique for the investigation ...
Optical (refractive index) and structural properties of silicon oxynitride (SiON) and amorphous sil...
Optical (refractive index) and structural properties of silicon oxynitride (SiON) and amorphous sil...
We have analyzed the influence of rapid thermal annealing (from 300 to 1050 degrees C) on the optica...
a-Si1xNx:H thin films grown by PECVD in a wide compositional range were characterized by spectroscop...
a-Si1-xNx:H thin films grown by PECVD in a wide compositional range were characterized by spectrosco...
a-Si1-xNx:H thin films grown by PECVD in a wide compositional range were characterized by spectrosco...
Hydrogenated amorphous silicon-nitrides (a-SiNx:H) and -oxycarbides (a-SiOxCy:H) were grown by plasm...
Hydrogenated amorphous silicon-nitrides (a-SiNx:H) and -oxycarbides (a-SiOxCy:H) were grown by plasm...
Amorphous silicon-nitrogen (a-Si1-xNx:H) alloys with x in the range 0.01-0.57 have been deposited in...
It has been reported earlier that the attenuation lengths of photoelectrons from very thin amorphous...
International audienceThe aim of this work is to determine optimal deposition parameters of silicon ...
International audienceThe aim of this work is to determine optimal deposition parameters of silicon ...
Spectroscopic Ellipsometry (SE) is a powerful and universal optical technique for the investigation ...
International audienceThe aim of this work is to determine optimal deposition parameters of silicon ...
Spectroscopic Ellipsometry (SE) is a powerful and universal optical technique for the investigation ...
Optical (refractive index) and structural properties of silicon oxynitride (SiON) and amorphous sil...
Optical (refractive index) and structural properties of silicon oxynitride (SiON) and amorphous sil...
We have analyzed the influence of rapid thermal annealing (from 300 to 1050 degrees C) on the optica...