We have investigated the decapped GaAs(311)A surface using both scanning tunneling microscopy and synchrotron-radiation photoemission. While our data are in broad agreement with the structural model of GaAs(311)A proposed in a recent study [Wassermeier et al., Phys. Rev. B 51, 14 721 (1995)], we find considerable differences in the surface order. In particular, the As dimer rows are unbroken over much shorter length scales and are highly kinked. We observe a correspondingly lower degree of anisotropy in the surface roughness than that previously reported. An (8×1) reconstruction was not observed. An analysis of As 3d and Ga 3d core-level photoemission spectra suggests that surface As atoms are in only one bonding configuration while surface...
GaAs(113̄)B surfaces were prepared by ion bombardment and annealing (IBA) and by molecular beam epit...
The GaAs (113)A surface was prepared by molecular beam epitaxy and investigated in situ by means of ...
We investigated GaAs (1 1 3) surfaces prepared by molecular beam epitaxy (MBE) and metal-organic vap...
We have investigated the decapped GaAs(311)A surface using both scanning tunneling microscopy and sy...
The GaAs((113) over bar)B surfaces were prepared by molecular-beam epitaxy and were in situ studied ...
GaAs samples with orientations vicinal to (2 5 11) within 1degree were prepared by molecular beam ep...
GaAs(114)A surfaces were prepared using molecular beam epitaxy followed by annealing in As-2 pressur...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...
[[abstract]]The atomic structures of (331)‐A and (331)‐B GaAs surfaces, prepared by ion bombardment ...
The aim of this thesis was to investigate GaAs surfaces whose orientations are located inside the st...
We prepared alpha- and beta surface phases of GaAs(0 0 1)-c(4 x 4) reconstruction by molecular beam ...
Electronic and structural properties of GaAs(100)(2x4), InAs(100)(2x4), and Sb/InAs(100)(2x4) recons...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
The atomic structure of the GaAs(001) surface has been disputed since molecular beam epitaxy (MBE) t...
The GaAs(112)A and (1̄1̄2̄)B surfaces have been prepared by molecular-beam epitaxy (MBE) and analyze...
GaAs(113̄)B surfaces were prepared by ion bombardment and annealing (IBA) and by molecular beam epit...
The GaAs (113)A surface was prepared by molecular beam epitaxy and investigated in situ by means of ...
We investigated GaAs (1 1 3) surfaces prepared by molecular beam epitaxy (MBE) and metal-organic vap...
We have investigated the decapped GaAs(311)A surface using both scanning tunneling microscopy and sy...
The GaAs((113) over bar)B surfaces were prepared by molecular-beam epitaxy and were in situ studied ...
GaAs samples with orientations vicinal to (2 5 11) within 1degree were prepared by molecular beam ep...
GaAs(114)A surfaces were prepared using molecular beam epitaxy followed by annealing in As-2 pressur...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...
[[abstract]]The atomic structures of (331)‐A and (331)‐B GaAs surfaces, prepared by ion bombardment ...
The aim of this thesis was to investigate GaAs surfaces whose orientations are located inside the st...
We prepared alpha- and beta surface phases of GaAs(0 0 1)-c(4 x 4) reconstruction by molecular beam ...
Electronic and structural properties of GaAs(100)(2x4), InAs(100)(2x4), and Sb/InAs(100)(2x4) recons...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
The atomic structure of the GaAs(001) surface has been disputed since molecular beam epitaxy (MBE) t...
The GaAs(112)A and (1̄1̄2̄)B surfaces have been prepared by molecular-beam epitaxy (MBE) and analyze...
GaAs(113̄)B surfaces were prepared by ion bombardment and annealing (IBA) and by molecular beam epit...
The GaAs (113)A surface was prepared by molecular beam epitaxy and investigated in situ by means of ...
We investigated GaAs (1 1 3) surfaces prepared by molecular beam epitaxy (MBE) and metal-organic vap...