We investigate the possibility of inter-conduction band without global inversion by engineering the conduction band effective masses so that the upper lasing subband has an effective mass considerably smaller than the lower lasing subband that could not be obtained in conventional III-V materials. We recover the expected dispersive gain shape for similar masses and contrasting results if the effective masses characterizing the relevant subbands are very different
III-V compounds consisting of nitrogen are candidates for interband transition applications because ...
Dilute nitride III-V compound semiconductor materials have attracted considerable interests in recen...
A microscopic mechanism for intersubband lasing without inversion based on valence band transitions ...
We investigate the possibility of interconduction band gain without global inversion by engineering ...
We investigate the possibility of interconduction band gain without global inversion by engineering ...
We investigate the possibility of interconduction band gain without global inversion by engineering ...
We investigate the possibility of interconduction band gain without global inversion by engineering ...
We investigate the possibility of interconduction band gain without global inversion by engineering ...
In this paper we discuss inter-conduction band gain without global inversion by engineering the cond...
In this paper we investigate the possibility of producing local population inversion that can lead t...
This paper summarizes recent developments in the search for materials and designs that can lead to l...
The linewidth enhancement (α factor) due to fluctuations in the refractive index induced by carrier ...
The main candidate to be a practical and low cost high power THz source is the intersubband-based qu...
Dilute nitride III-V compound semiconductor materials have attracted considerable interests in recen...
International audienceThe terms "intersubband" (ISB) or "intraband" refer to electronic transitions ...
III-V compounds consisting of nitrogen are candidates for interband transition applications because ...
Dilute nitride III-V compound semiconductor materials have attracted considerable interests in recen...
A microscopic mechanism for intersubband lasing without inversion based on valence band transitions ...
We investigate the possibility of interconduction band gain without global inversion by engineering ...
We investigate the possibility of interconduction band gain without global inversion by engineering ...
We investigate the possibility of interconduction band gain without global inversion by engineering ...
We investigate the possibility of interconduction band gain without global inversion by engineering ...
We investigate the possibility of interconduction band gain without global inversion by engineering ...
In this paper we discuss inter-conduction band gain without global inversion by engineering the cond...
In this paper we investigate the possibility of producing local population inversion that can lead t...
This paper summarizes recent developments in the search for materials and designs that can lead to l...
The linewidth enhancement (α factor) due to fluctuations in the refractive index induced by carrier ...
The main candidate to be a practical and low cost high power THz source is the intersubband-based qu...
Dilute nitride III-V compound semiconductor materials have attracted considerable interests in recen...
International audienceThe terms "intersubband" (ISB) or "intraband" refer to electronic transitions ...
III-V compounds consisting of nitrogen are candidates for interband transition applications because ...
Dilute nitride III-V compound semiconductor materials have attracted considerable interests in recen...
A microscopic mechanism for intersubband lasing without inversion based on valence band transitions ...