Nonlinear lensing in an unpumped antiresonant semiconductor disk laser gain structure

We characterize the nonlinear lens in an antiresonant 11 quantum well InGaAs/GaAsP semiconductor disk laser gain structure designed for operation at 1035 nm using a reflection-type z-scan technique. We probe at a wavelength of 1035 nm and with a sub-picosecond pulse duration. The measured n2 was within the range of -5.6 × 10-13 cm2/W < n2 < -3.1 × 10-13 cm2/W