This paper presents a time-redundant technique to mitigate Negative and Positive Bias Temperature Instability (NBTI/PBTI) ageing effects on the functional units of a processor. We have analysed the sources and effects of ageing from the device level to the Instruction Set Architecture (ISA) level, and have found that an application may stress the critical paths in such a way that the circuit has half of its nodes always NBTI-stressed. To mitigate this behaviour, we propose an application-level solution to balance the stress and put the timing-critical gates of the critical path into a relaxed (balanced) mode. The results show that the lifetime of the system can be doubled by applying balanced stress patterns at the software level during the...
Invasive and non-invasive methods of BTI monitoring and wearout preemption have been proposed. We pr...
Aggressive CMOS technology scaling trends exacerbate the aging-related degradation of propagation de...
NBTI is becoming one of the major circuit reliability issues in nano-scale technologies. BTI can cau...
In this chapter, we will aim to reverse the aging stress on the functional units of the processor by...
Microprocessors offer the ability for fast and reliable processing and are indispensable in many gen...
CMOS downsizing has posed a growing concern about circuit lifetime reliability. Bias Temperature Ins...
Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) are two major causes for transist...
The proposed paper addresses the overarching reliability issue of transistor aging in nanometer-scal...
Memory designs require timing margins to compensate for aging and fabrication process variations. Wi...
As technology further scales semiconductor devices, aging-induced device degradation has become one ...
CMOS devices suffer from wearout mechanismsresulting in reliability issues. Negative bias temperatur...
As CMOS technology scales down, ageing-induced negative-bias temperature instability (NBTI) becomes ...
Reliability is a fundamental challenge for current and future microprocessors with advanced nanoscal...
Reliability is a fundamental challenge for current and future microprocessors with advanced nanoscal...
Ensuring operational reliability in the presence of Bias Temperature Instability (BTI) effects often...
Invasive and non-invasive methods of BTI monitoring and wearout preemption have been proposed. We pr...
Aggressive CMOS technology scaling trends exacerbate the aging-related degradation of propagation de...
NBTI is becoming one of the major circuit reliability issues in nano-scale technologies. BTI can cau...
In this chapter, we will aim to reverse the aging stress on the functional units of the processor by...
Microprocessors offer the ability for fast and reliable processing and are indispensable in many gen...
CMOS downsizing has posed a growing concern about circuit lifetime reliability. Bias Temperature Ins...
Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) are two major causes for transist...
The proposed paper addresses the overarching reliability issue of transistor aging in nanometer-scal...
Memory designs require timing margins to compensate for aging and fabrication process variations. Wi...
As technology further scales semiconductor devices, aging-induced device degradation has become one ...
CMOS devices suffer from wearout mechanismsresulting in reliability issues. Negative bias temperatur...
As CMOS technology scales down, ageing-induced negative-bias temperature instability (NBTI) becomes ...
Reliability is a fundamental challenge for current and future microprocessors with advanced nanoscal...
Reliability is a fundamental challenge for current and future microprocessors with advanced nanoscal...
Ensuring operational reliability in the presence of Bias Temperature Instability (BTI) effects often...
Invasive and non-invasive methods of BTI monitoring and wearout preemption have been proposed. We pr...
Aggressive CMOS technology scaling trends exacerbate the aging-related degradation of propagation de...
NBTI is becoming one of the major circuit reliability issues in nano-scale technologies. BTI can cau...