A new GaInP/GaAs HBT model for power applications is presented. It is based on the Gummel-Poon model. Additionally, it accounts for the increase of the thermal resistance at high temperatures and the high collector-current base push-out effect. The model is validated for GaInP/GaAs HBTs
A new SPICE-type, HBT large-signal model is described with special emphasis on the associated parame...
This paper presents an equivalent circuit model for common-emitter current-gain collapse in multi-fi...
A compact and robust InGaP-GaAs HBT model has been developed for accurate large-signal and linearity...
A new GaInP/GaAs HBT model for power applications is presented. It is based on the Gummel-Poon model...
International audienceA new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is p...
Description of an eight mode heterojunction bipolar transistor model suitable for circuit simulation...
A new heterojunction bipolar transistor (HBT) model has been implemented in TECAP. The paper describ...
A physical basis for large-signal HBT modeling was established in terms of transit times using a Mon...
Abstract — A new modified Gummel-Poon (MGP) based model has been developed and tested on heterojunc...
This paper describes a model for a GaAs/AlGaAs Heterojunction Bipolar Transistor (HBT). The model is...
The performance of recently developed Large Signal (LS) HBT model was evaluated with extensive LS me...
A new large signal electrothermal Heterojunction Bipolar Transistor (HBT) model with original parame...
This paper reports on the development of GaInP/GaAs HBTs suitable for high-voltage operation First, ...
The authors present an analytic, empirical largesignal model for the efficient simulation of Hetero ...
103 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.This work describes a modelin...
A new SPICE-type, HBT large-signal model is described with special emphasis on the associated parame...
This paper presents an equivalent circuit model for common-emitter current-gain collapse in multi-fi...
A compact and robust InGaP-GaAs HBT model has been developed for accurate large-signal and linearity...
A new GaInP/GaAs HBT model for power applications is presented. It is based on the Gummel-Poon model...
International audienceA new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is p...
Description of an eight mode heterojunction bipolar transistor model suitable for circuit simulation...
A new heterojunction bipolar transistor (HBT) model has been implemented in TECAP. The paper describ...
A physical basis for large-signal HBT modeling was established in terms of transit times using a Mon...
Abstract — A new modified Gummel-Poon (MGP) based model has been developed and tested on heterojunc...
This paper describes a model for a GaAs/AlGaAs Heterojunction Bipolar Transistor (HBT). The model is...
The performance of recently developed Large Signal (LS) HBT model was evaluated with extensive LS me...
A new large signal electrothermal Heterojunction Bipolar Transistor (HBT) model with original parame...
This paper reports on the development of GaInP/GaAs HBTs suitable for high-voltage operation First, ...
The authors present an analytic, empirical largesignal model for the efficient simulation of Hetero ...
103 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.This work describes a modelin...
A new SPICE-type, HBT large-signal model is described with special emphasis on the associated parame...
This paper presents an equivalent circuit model for common-emitter current-gain collapse in multi-fi...
A compact and robust InGaP-GaAs HBT model has been developed for accurate large-signal and linearity...
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