The paper presents a measurement-based largesignal distributed model for high-speed electroabsorption modulators, integrated within an RF circuit CAD environment. The model is implemented through a cascaded-cell approach; the identification of the nonlinear lumped equivalent circuit parameters of each cell through measurements is discussed and an example is provided of circuit extraction. An example of integrated driver-EAM simulation is finally discussed
A general technique for predicting the MODFET large signal performance has been developed. The techn...
A compact large-signal model(LS) for high frequency CMOS transistors is proposed and experimentally ...
This paper outlines a non-linear measurement approach suitable for wafer mapping and technology scre...
International audienceA specific modeling method is investigated in order to predict the large-signa...
The design of high-speed modulator requires to model, analyze and optimize not only the electro-opti...
In RF power device design, much of the analysis is based on measurements. Complete analysis by simul...
This paper introduces a new approach allowing for the direct utilization of large signal measurement...
This paper discusses a procedure to extract large-signal models for microwave transistors. By using ...
Large signal analysis of the serially cascaded electroabsorption modulator driven by a multisinusoid...
Abstract. In this paper a method “Component Series Mod-eling ” (CoSeMod) is presented. This allows f...
Large signal analysis of the electroabsorption modulator driven by a multisinusoidal RF signal is pr...
Large-signal models for microwave devices are commonly based on DC and S-parameter measurements. The...
The design of high frequency large-signal active devices depends heavily upon the accuracy of the mo...
Nonlinear models of microwave transistors are essential for the design of high-frequency nonlinear c...
A compact model is presented for high-speed electro-optic modulators fully integrated within the fra...
A general technique for predicting the MODFET large signal performance has been developed. The techn...
A compact large-signal model(LS) for high frequency CMOS transistors is proposed and experimentally ...
This paper outlines a non-linear measurement approach suitable for wafer mapping and technology scre...
International audienceA specific modeling method is investigated in order to predict the large-signa...
The design of high-speed modulator requires to model, analyze and optimize not only the electro-opti...
In RF power device design, much of the analysis is based on measurements. Complete analysis by simul...
This paper introduces a new approach allowing for the direct utilization of large signal measurement...
This paper discusses a procedure to extract large-signal models for microwave transistors. By using ...
Large signal analysis of the serially cascaded electroabsorption modulator driven by a multisinusoid...
Abstract. In this paper a method “Component Series Mod-eling ” (CoSeMod) is presented. This allows f...
Large signal analysis of the electroabsorption modulator driven by a multisinusoidal RF signal is pr...
Large-signal models for microwave devices are commonly based on DC and S-parameter measurements. The...
The design of high frequency large-signal active devices depends heavily upon the accuracy of the mo...
Nonlinear models of microwave transistors are essential for the design of high-frequency nonlinear c...
A compact model is presented for high-speed electro-optic modulators fully integrated within the fra...
A general technique for predicting the MODFET large signal performance has been developed. The techn...
A compact large-signal model(LS) for high frequency CMOS transistors is proposed and experimentally ...
This paper outlines a non-linear measurement approach suitable for wafer mapping and technology scre...