Influence of passivation on High-Power AlGaN/GaN HEMT devices at 10GHz.
- Ducatteau, D.
- Werquin, M.
- Gaquière, C.
- Théron, D.
- Martin, T.
- Delos, E.
- Grimbert, B.
- Morvan, E.
- Caillas, N.
- Hoël, V.
- De Jaeger, J.C.
- Delage, S. L.
Publication date
January 2004
DOIAbstract
AlGaN/GaN high electron mobility transistors (HEMTS on SiC) were characterized before and after SiO2/Si3N4 passivation. DC, small signal, pulsed and large signal measurements were performed. We discuss the role and the influence of passivation on the device performance and characteristics. A good correlation is observed between pulsed and power measurements. At 10GHz, a 6.3W/mm power density with a 36% PAE at 2dB of compression was obtained after passivation, while only 2.9W/mm before passivation
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