Vertical Silicon K-Band CPW Through-Wafer Interconnects

With the increase in production volume of RF devices (e.g. for automotive applications), packaging and interconnection become more and more important. Furthermore, new system concepts such as chip-on-chip or RF- MEMS demand new packaging strategies. This paper presents a vertical silicon micromachined RF CPW through- wafer feedthrough with excellent performance in the K-band. In particular, the feedthrough demonstrates an insertion loss of 0.16dB and a return loss of 20dB at 25GHz. A lumped element model was developed and was evaluated with measurements