For AlGaN/GaN high electron mobility transistors (HEMTs), the voltage and current waveforms at CW large-signal operation at 5 GHz have been reconstructed from experimental magnitude and phase information on fundamental and higher harmonics of transmitted and reflected signals. To compare with the DC behaviour, the clipped waveforms have accurately been analysed to recover the dynamic output characteristics in view of dispersion effects related to self-heating. In conjunction with small-signal S-parameter data, the large-signal experimental results have been used in an attempt to apply a HEMT large-signal model, showing satisfactory agreement of simulated and measured characteristics at least in regions where self-heating is not much pronoun...
A novel nonlinear model for MESFET/HEMT devices is presented. The model can be applied to low power ...
In this paper a recently proposed identification procedure based on exciting the device under test s...
An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transisto...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
In this paper are given some recent results on modeling of High Power GaN HEMT devices. The GaN HEMT...
In this paper a procedure to extract temperature dependent equivalent circuits for modeling the smal...
There is an increasing need for more accurate models taking into account the nonlinearities and memo...
The high electron mobility transistors (HEMTs) fabricated using wide-bandgap semiconductors show pro...
During the past decade, the commercial outlook for GaN-based devices has grown considerably to meet ...
The purpose of this study is to present an advanced technique for accurately modeling the behavior o...
International audienceAlGaN/GaN hetero-structure varactors with various sizes have been fabricated a...
The large-signal RF power performance of an AlGaN/GaN High Electron Mobility Transistor (HEMT) is st...
Abstract: This paper shows a physical approach to large-signal electro-thermal simulation of AlGaN/...
The extraction of an accurate model for GaN HEMT devices is of fundamental importance for high-power...
The next generation of integrated transceiver front-ends needs both robustlow noise amplifiers and h...
A novel nonlinear model for MESFET/HEMT devices is presented. The model can be applied to low power ...
In this paper a recently proposed identification procedure based on exciting the device under test s...
An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transisto...
International audienceRF GaN power technologies are emerging for future equipment in the defence, sp...
In this paper are given some recent results on modeling of High Power GaN HEMT devices. The GaN HEMT...
In this paper a procedure to extract temperature dependent equivalent circuits for modeling the smal...
There is an increasing need for more accurate models taking into account the nonlinearities and memo...
The high electron mobility transistors (HEMTs) fabricated using wide-bandgap semiconductors show pro...
During the past decade, the commercial outlook for GaN-based devices has grown considerably to meet ...
The purpose of this study is to present an advanced technique for accurately modeling the behavior o...
International audienceAlGaN/GaN hetero-structure varactors with various sizes have been fabricated a...
The large-signal RF power performance of an AlGaN/GaN High Electron Mobility Transistor (HEMT) is st...
Abstract: This paper shows a physical approach to large-signal electro-thermal simulation of AlGaN/...
The extraction of an accurate model for GaN HEMT devices is of fundamental importance for high-power...
The next generation of integrated transceiver front-ends needs both robustlow noise amplifiers and h...
A novel nonlinear model for MESFET/HEMT devices is presented. The model can be applied to low power ...
In this paper a recently proposed identification procedure based on exciting the device under test s...
An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transisto...