Add to ORKGZnSe films were deposited on titanium and conducting glass substrates at 50 % duty cycle and at different deposition temperatures in the range of 30- 80°C. The deposition current density was maintained constant at 100 mA cm-2.. The prominent peaks corresponding to the cubic phase are observed in all cases. The crystallite size increased with deposition temperature. The cross plane resistivity was found to decrease with increase of substrate temperature
The zinc selenide (ZnSe) nanocrystal thin films have been prepared on glass substrates by chemical b...
ZnSe layers have been grown by a low temperature (similar to 65 degrees C) electrochemical depositio...
739-743The ZnSe material synthesised by the fusion method was used to deposit 200 nm thin layers on ...
ZnSe films were deposited on titanium and conducting glass substrates at 50 % duty cycle and at dif...
ZnSe films were deposited on glass substrates keeping the substrate temperatures, at room temperatur...
ZnSe thin films were pulse plated on titanium and tin oxide substrates maintained at room temperatur...
ZnSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 -C fro...
Initial growth stage evaluation of high quality ZnSe films deposited on a glass substrate was invest...
ZnSe layers have been grown by a low temperature (similar to 65 degrees C) electrochemical depositio...
ZnSe thin film deposition and their properties are briefly reviewed in this article. This includes a...
Abstract: Closed space sublimation (CSS) technique was used to deposit pure (99.99%) zinc selenide(Z...
The Zinc Selenide (ZnSe) thin films have been deposited on SnO2/glass substrates by a simple and ine...
The Zinc Selenide (ZnSe) thin films have been deposited on SnO2/glass substrates by a simple and ine...
The Zinc Selenide (ZnSe) thin films have been deposited on SnO2/glass substrates by a simple and ine...
The ZnSe, a wide band gap semiconductor has high potential for application in optoelectronic applica...
The zinc selenide (ZnSe) nanocrystal thin films have been prepared on glass substrates by chemical b...
ZnSe layers have been grown by a low temperature (similar to 65 degrees C) electrochemical depositio...
739-743The ZnSe material synthesised by the fusion method was used to deposit 200 nm thin layers on ...
ZnSe films were deposited on titanium and conducting glass substrates at 50 % duty cycle and at dif...
ZnSe films were deposited on glass substrates keeping the substrate temperatures, at room temperatur...
ZnSe thin films were pulse plated on titanium and tin oxide substrates maintained at room temperatur...
ZnSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 -C fro...
Initial growth stage evaluation of high quality ZnSe films deposited on a glass substrate was invest...
ZnSe layers have been grown by a low temperature (similar to 65 degrees C) electrochemical depositio...
ZnSe thin film deposition and their properties are briefly reviewed in this article. This includes a...
Abstract: Closed space sublimation (CSS) technique was used to deposit pure (99.99%) zinc selenide(Z...
The Zinc Selenide (ZnSe) thin films have been deposited on SnO2/glass substrates by a simple and ine...
The Zinc Selenide (ZnSe) thin films have been deposited on SnO2/glass substrates by a simple and ine...
The Zinc Selenide (ZnSe) thin films have been deposited on SnO2/glass substrates by a simple and ine...
The ZnSe, a wide band gap semiconductor has high potential for application in optoelectronic applica...
The zinc selenide (ZnSe) nanocrystal thin films have been prepared on glass substrates by chemical b...
ZnSe layers have been grown by a low temperature (similar to 65 degrees C) electrochemical depositio...
739-743The ZnSe material synthesised by the fusion method was used to deposit 200 nm thin layers on ...