An Analysis of the Temperature Distribution During Crystal Growth by THM

The temperature distribution during crystal growth by the traveling heater method (THM) has been calculated by numerical integration of the Laplace equation for a cylindrical geometry. The boundary between the liquid and solid, which have different physical properties, was assumed to be an iso-therm. The radial and longitudinal temperatures, the isotherms, and the inter-face shape have been calculated for different heater temperatures, interface temperatures and geometries. Also briefly described are a one-dimensional model that neglects radial gradients and an analytical solution for an idealized geometry and boundary conditions. When numerical values are determined, parameters appropriate to the growth of CdTe by Te are used. Some of the practical implications with regard to crystal growth behavior are discussed. Recently, the traveling heater method of crystal growth (THM) has been applied to a number of com-pounds including CdTe (1, 2), GaAs (3), GaP (4, 5)