Add to ORKGSingle-electron transistors with sidewall depletion gates on a silicon-on-insulator (SOI) nanowire are proposed and were fabricated using a combination of conventional lithography and process technology. The island-size dependence of the electrical characteristics showed good controllability. Based on the high-voltage gain and the Coulomb oscillation peak position control by the sidewall gate voltage, the basic operation of a single-electron inverter was demonstrated at 12.5 K. PACS numbers: 85.35.Gv, 73.23.Hk, 73.23.-b
One of the great problems in current large-scale integrated circuits is increasing power dissipation...
Basic operation of a dynamic exclusive-OR gate implemented by field effect transistor and a single-e...
[[abstract]]We propose a promising fabrication technology for single-electron transistors based on a...
Single-electron transistors with sidewall depletion gates on a silicon-on-insulator (SOI) nanowire a...
Single-electron transistors with sidewall depletion gates on a silicon-On-insulator (SOI) nanowire a...
Si single-electron transistors with sidewall depletion gates on a silicon-on-insulator nanowire are ...
Novel single-electron transistors (SETs) with side-wall depletion gates on a silicon-on-insulator na...
Abstract—Novel single-electron transistors (SETs) with side-wall depletion gates on a silicon–on–ins...
Novel single-electron transistors with sidewall depletion gates on a silicon-on-insulator nano-wire ...
The island size dependence of the capacitance components of single-electron transistors (SETs) based...
The fabrication of single electron transistors (SET) with sidewall depletion gates on a silicon on i...
For the purpose of controllable characteristics, silicon single-electron tunneling transistors with ...
[[abstract]]A dual-gate-controlled single-electron transistor was fabricated by using self-aligned p...
We have implemented a sidewall spacer patterning method for novel dual-gate single-electron transist...
A single electron transistor based on a silicon-on-insulator is successfully fabricated with electro...
One of the great problems in current large-scale integrated circuits is increasing power dissipation...
Basic operation of a dynamic exclusive-OR gate implemented by field effect transistor and a single-e...
[[abstract]]We propose a promising fabrication technology for single-electron transistors based on a...
Single-electron transistors with sidewall depletion gates on a silicon-on-insulator (SOI) nanowire a...
Single-electron transistors with sidewall depletion gates on a silicon-On-insulator (SOI) nanowire a...
Si single-electron transistors with sidewall depletion gates on a silicon-on-insulator nanowire are ...
Novel single-electron transistors (SETs) with side-wall depletion gates on a silicon-on-insulator na...
Abstract—Novel single-electron transistors (SETs) with side-wall depletion gates on a silicon–on–ins...
Novel single-electron transistors with sidewall depletion gates on a silicon-on-insulator nano-wire ...
The island size dependence of the capacitance components of single-electron transistors (SETs) based...
The fabrication of single electron transistors (SET) with sidewall depletion gates on a silicon on i...
For the purpose of controllable characteristics, silicon single-electron tunneling transistors with ...
[[abstract]]A dual-gate-controlled single-electron transistor was fabricated by using self-aligned p...
We have implemented a sidewall spacer patterning method for novel dual-gate single-electron transist...
A single electron transistor based on a silicon-on-insulator is successfully fabricated with electro...
One of the great problems in current large-scale integrated circuits is increasing power dissipation...
Basic operation of a dynamic exclusive-OR gate implemented by field effect transistor and a single-e...
[[abstract]]We propose a promising fabrication technology for single-electron transistors based on a...