Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film

Abstract — This letter investigates various oxygen concentra-tions in indium oxide films which induce different resistance switching behaviors, including two self-compliance behaviors and a two-step set process. The accumulated oxygen ions produce an oxygen-rich indium oxide film, which can be considered as a variable series resistor after the forming process. Analyses indicate that the lower self-compliance current can be attributed to this larger variable series resistor from the additional oxygen ions. The more significant oxidation reaction decreases the current of the high resistance state. Hence, power consumption can be reduced effectively. Index Terms — RRAM, nonvolatile resistance switching memory, indium oxide