Add to ORKGwas published in Materials and is made available as an electronic reprint (preprint) with permission of The Author(s) (published by MDPI). The paper can be found at the following official DOI
Time dependent dielectric breakdown (TDDB) is one of the important failure mechanisms for Copper (Cu...
Ultra-low-k time-dependent dielectric breakdown (TDDB) is one of the most important reliability iss...
As integrated circuits scale down in size, their interconnects are placed under harsher conditions s...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
Abstract—Backend low-k time-dependent dielectric breakdown degrades reliability of circuits with Cop...
Time-dependent dielectric breakdown (TDDB) is becoming one of the main reliability issues of Cu/low-...
A physical model of copper interconnect dielectric breakdown is studied. The general continuity equa...
Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu...
Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu...
Advanced interconnect technologies require the continuous development of reliable low-k dielectric m...
Time-dependent dielectric breakdown (TDDB) reliability is increasingly becoming a critical reliabili...
The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most cri...
An in situ transmission-electron-microscopy methodology is developed to observe time-dependent diele...
The miniaturization of integrated circuits (ICs) has led to the use of copper and low-k dielectrics ...
Time dependent dielectric breakdown (TDDB) is one of the important failure mechanisms for Copper (Cu...
Ultra-low-k time-dependent dielectric breakdown (TDDB) is one of the most important reliability iss...
As integrated circuits scale down in size, their interconnects are placed under harsher conditions s...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
Abstract—Backend low-k time-dependent dielectric breakdown degrades reliability of circuits with Cop...
Time-dependent dielectric breakdown (TDDB) is becoming one of the main reliability issues of Cu/low-...
A physical model of copper interconnect dielectric breakdown is studied. The general continuity equa...
Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu...
Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu...
Advanced interconnect technologies require the continuous development of reliable low-k dielectric m...
Time-dependent dielectric breakdown (TDDB) reliability is increasingly becoming a critical reliabili...
The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most cri...
An in situ transmission-electron-microscopy methodology is developed to observe time-dependent diele...
The miniaturization of integrated circuits (ICs) has led to the use of copper and low-k dielectrics ...
Time dependent dielectric breakdown (TDDB) is one of the important failure mechanisms for Copper (Cu...
Ultra-low-k time-dependent dielectric breakdown (TDDB) is one of the most important reliability iss...
As integrated circuits scale down in size, their interconnects are placed under harsher conditions s...