Add to ORKGIn this paper, a complete study of the cell reliability based on a unique oxide damage characterization for two dif-ferent programming schemes of p-channel flash cell will be presented. These two programming schemes are Channel Hot Electron (CHE) injection or Band-to-Band (BTB) tunneling induced hot electron injection. Degradation of memory cells after PIE cycles due to the above oxide damages has been identified. It was found that both Nit and Qox will dominate the device degradation during programming. Although p-flash cell has high speed performance by comparing with n-flash cell, extra efforts are needed for designing reliable p-channel flash cell by appropriate drain engineering or related device optimization
Flash technology still represents the preferred storage memory in many portable consumers and comput...
International audienceThe problem of energy saving has today a relevant importance, concerning in pa...
[[abstract]]A novel p-channel flash device with a SiGe layer is proposed, which is based on the anal...
[[abstract]]In this paper, a comprehensive study of n- and p-channel flash cells in terms of perform...
This chapter overviews the basic physical effects involved in programming and erasing of Flash memor...
A new technique for separating the oxide damage due to program/erase (P/E) cycling and of parasitic ...
[[abstract]]In this paper, the n-channel Flash memory device degradation by utilizing the drain-aval...
In this paper, we report an extensive study of drain disturb in isolated cells under Channel Hot Ele...
In this work, we demonstrate the feasibility of using channel initiated secondary electron (CHISEL) ...
International audienceIn this paper the consumption of Flash Floating Gate cell, during a channel ho...
The impact of Program/Erase (P/E) cycling on drain disturb in NOR Flash EEPROM cells under Channel H...
In this paper, through the use of a recently proposed statistical model of stress-induced leakage cu...
The impact of technological parameter (channel doping, source/drain junction depth) variation and ch...
Flash memories represent today a mainstream technology, finding ever increasing applications for bot...
The impact of technological parameter (channel doping, source/drain junction depth) variation and ch...
Flash technology still represents the preferred storage memory in many portable consumers and comput...
International audienceThe problem of energy saving has today a relevant importance, concerning in pa...
[[abstract]]A novel p-channel flash device with a SiGe layer is proposed, which is based on the anal...
[[abstract]]In this paper, a comprehensive study of n- and p-channel flash cells in terms of perform...
This chapter overviews the basic physical effects involved in programming and erasing of Flash memor...
A new technique for separating the oxide damage due to program/erase (P/E) cycling and of parasitic ...
[[abstract]]In this paper, the n-channel Flash memory device degradation by utilizing the drain-aval...
In this paper, we report an extensive study of drain disturb in isolated cells under Channel Hot Ele...
In this work, we demonstrate the feasibility of using channel initiated secondary electron (CHISEL) ...
International audienceIn this paper the consumption of Flash Floating Gate cell, during a channel ho...
The impact of Program/Erase (P/E) cycling on drain disturb in NOR Flash EEPROM cells under Channel H...
In this paper, through the use of a recently proposed statistical model of stress-induced leakage cu...
The impact of technological parameter (channel doping, source/drain junction depth) variation and ch...
Flash memories represent today a mainstream technology, finding ever increasing applications for bot...
The impact of technological parameter (channel doping, source/drain junction depth) variation and ch...
Flash technology still represents the preferred storage memory in many portable consumers and comput...
International audienceThe problem of energy saving has today a relevant importance, concerning in pa...
[[abstract]]A novel p-channel flash device with a SiGe layer is proposed, which is based on the anal...