An InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. It features the use of a fully strained pseudomorphic GaAsSb (Sb composition: 10.4%) as the base layer and an InGaP layer as the emitter, which both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. A current gain of 200 has been obtained from the InGaP/GaAsSb/GaAs DHBT, which is the highest value obtained from GaAsSb base GaAs-based HBTs. The turn-on voltage of the device is typically 0.914 V for the 10.4 % Sb composition, which is 0.176V lower than that of traditional InGaP/GaAs HBT. The results show that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs. I
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.In this work, GaAsSb-based dou...
An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50Å undoped spacer and δ-doped sheet a...
The InP/GaAsSb/InP DHBT (Double Heterojunction Bipolar Transistor) has demonstrated superior high-fr...
An InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. It features the u...
A novel InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor is presented. It features...
A study of the InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. Novel...
A novel InGaP/GaAs0.92Sb0.08/GaAs double heterojunction bipolar transistor (DHBT) with low turn-on v...
The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using...
We have developed InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) with low turn-...
The thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors...
The authors demonstrate, for the first time, both functional Pnp AlGaAs/InGaAsN/GaAs (Pnp InGaAsN) a...
The fundamental lower limit on the turn-on voltage of GaAs-based bipolar transistors is reduced with...
The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice m...
Heterojunction bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequenc...
The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar...
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.In this work, GaAsSb-based dou...
An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50Å undoped spacer and δ-doped sheet a...
The InP/GaAsSb/InP DHBT (Double Heterojunction Bipolar Transistor) has demonstrated superior high-fr...
An InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. It features the u...
A novel InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor is presented. It features...
A study of the InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. Novel...
A novel InGaP/GaAs0.92Sb0.08/GaAs double heterojunction bipolar transistor (DHBT) with low turn-on v...
The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using...
We have developed InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) with low turn-...
The thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors...
The authors demonstrate, for the first time, both functional Pnp AlGaAs/InGaAsN/GaAs (Pnp InGaAsN) a...
The fundamental lower limit on the turn-on voltage of GaAs-based bipolar transistors is reduced with...
The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice m...
Heterojunction bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequenc...
The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar...
91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.In this work, GaAsSb-based dou...
An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50Å undoped spacer and δ-doped sheet a...
The InP/GaAsSb/InP DHBT (Double Heterojunction Bipolar Transistor) has demonstrated superior high-fr...