Extra Low-temperature SiO2 Deposition Using Aminosilanes

High quality SiO2 thin films were grown by atomic layer deposition using a newly considered silicon precursor, SAM24, an aminosilane, with an ozone/oxygen mixture. SAM24 is a liquid and has sufficient volatility (with a vapor pressure of 2 Torr at R.T.) and is therefore easy to deliver into the reactor. Deposits obtained exhibit a very good thickness control when deposited as low as 100 ºC and up to 400 ºC at 1 Torr in a hot wall reactor