Add to ORKGAbstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS technology, because of its superior device performance, scalability, lower leakage power consumption and cost-effective fabrication process. Fin-type field-effect transistors (FinFETs) are capable substitutes for bulk CMOS at the nano-scale. Previous works have studied the performance or power advantages of FinFET circuits over bulk CMOS circuits. This paper elucidates the dependability analysis of Average power, Leakage power, Leakage current and Delay of AND gate using double gate FinFET. Our experiments compare FinFET circuits at different voltages at 45 nm technology in virtuoso tool of cadence, showing that DG FinFET circuits have better de...
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling lea...
Abstract—Scaling of the standard single-gate bulk MOSFETs faces great challenges in the nanometer re...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nano scal...
In this paper we propose double gate transistor i.e. FINFETS circuits. It is the substitute of bulk ...
Abstract — A FinFET, a novel double-gate device structure is capable of scaling well into the nanoel...
FINFET terminological in exactitude process reuses a massive part of well accustomed conventional CM...
Scaling of the MOSFET face greater challenge by extreme power density due to leakage current in ultr...
Planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been leading the semiconduc...
Scaling of the standard single-gate bulk MOSFETs faces great challenges in the nanometer regime due ...
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling lea...
During analysis of complexities of the Metal Oxide Semiconductor Field Effect Transistors (MOSFET) t...
As scaling of conventional metal-oxide-semiconductor field effect transistor is approaching its fund...
Scaling of single-gate bulk MOSFET faces great challenges in the nanometer regime due to the severe ...
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling lea...
Abstract—Scaling of the standard single-gate bulk MOSFETs faces great challenges in the nanometer re...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nano scal...
In this paper we propose double gate transistor i.e. FINFETS circuits. It is the substitute of bulk ...
Abstract — A FinFET, a novel double-gate device structure is capable of scaling well into the nanoel...
FINFET terminological in exactitude process reuses a massive part of well accustomed conventional CM...
Scaling of the MOSFET face greater challenge by extreme power density due to leakage current in ultr...
Planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been leading the semiconduc...
Scaling of the standard single-gate bulk MOSFETs faces great challenges in the nanometer regime due ...
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling lea...
During analysis of complexities of the Metal Oxide Semiconductor Field Effect Transistors (MOSFET) t...
As scaling of conventional metal-oxide-semiconductor field effect transistor is approaching its fund...
Scaling of single-gate bulk MOSFET faces great challenges in the nanometer regime due to the severe ...
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling lea...
Abstract—Scaling of the standard single-gate bulk MOSFETs faces great challenges in the nanometer re...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...