Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN and InGaN/AlInGaN MQW Laser Diodes

In this thesis, theoretical analysis for different active layer structures is performed to minimize the laser threshold current of the ultraviolet GaN/AlGaN multiple-quantum-well laser diodes by using the LASTIP simulation program developed by Crosslight. The simulation results show that the lower threshold current can be obtained when the number of quantum wells is two or three and the aluminum compositions in barrier layer is about 10~12%. This optimal structure is attributed to several different effects including electro