Add to ORKGOur research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and electrical testing of the junctions is carried out. We present our first results on specific silicide-to-diffusion contact resistance characterization using the known Scott's Transmission Line Model (TLM) and our approach, considering particular geometry, with NiSi and PtSi as the silicides
Silicide formation as a result of the reaction of metals with silicon is a widely studied topic in s...
The Cox-Strack method is commonly applied to assess the contact resistivity between a metal and a se...
Temperature variation during semiconductor device operation can be significant and how this affects ...
Our research comprises the manufacturing of test structures to characterize the metal-semiconductor ...
The performance of Si integrated circuits depends on the transistor drive current. The drive current...
We present the data on specific silicide-to-silicon contact resistance (�?c) obtained using optimize...
Contact resistance measurements were carried out on n+ -Si/Pd2Si, n+ -Si/NiSi, n+ -Si/TiSi2, p+ -Si/...
Silicide contacts are used in semiconductor devices because of their relatively low sheet resistance...
The authors report values of contact resistivity for silicon/silicide interfaces, derived by applyin...
Advancements in nanotechnology have created the need for efficient means of communication of electri...
Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the co...
The metal resistance in the transmission line model (TLM) structures creates a serious obstacle to d...
A modified design of the transmission line model test structure uses the simple calculation of speci...
Low resistance ohmic contacts are of extreme importance to modern semiconductor devices. As device s...
In this paper, we have examined different metals (Au, Al, In) Ohmic contacts on spray deposited ZnS ...
Silicide formation as a result of the reaction of metals with silicon is a widely studied topic in s...
The Cox-Strack method is commonly applied to assess the contact resistivity between a metal and a se...
Temperature variation during semiconductor device operation can be significant and how this affects ...
Our research comprises the manufacturing of test structures to characterize the metal-semiconductor ...
The performance of Si integrated circuits depends on the transistor drive current. The drive current...
We present the data on specific silicide-to-silicon contact resistance (�?c) obtained using optimize...
Contact resistance measurements were carried out on n+ -Si/Pd2Si, n+ -Si/NiSi, n+ -Si/TiSi2, p+ -Si/...
Silicide contacts are used in semiconductor devices because of their relatively low sheet resistance...
The authors report values of contact resistivity for silicon/silicide interfaces, derived by applyin...
Advancements in nanotechnology have created the need for efficient means of communication of electri...
Analyzing the contact geometry factors for the conventional CBKR structures, it appeared that the co...
The metal resistance in the transmission line model (TLM) structures creates a serious obstacle to d...
A modified design of the transmission line model test structure uses the simple calculation of speci...
Low resistance ohmic contacts are of extreme importance to modern semiconductor devices. As device s...
In this paper, we have examined different metals (Au, Al, In) Ohmic contacts on spray deposited ZnS ...
Silicide formation as a result of the reaction of metals with silicon is a widely studied topic in s...
The Cox-Strack method is commonly applied to assess the contact resistivity between a metal and a se...
Temperature variation during semiconductor device operation can be significant and how this affects ...